丝印：SS84；Package：DO-214AB；SMD Schottky Barrier Rectifiers

Features - Built-in strain relief. - High surge and current capability. - For use in low voltage, high frequency invertors free - wheeling and polarity protection. - Metal silicon junction with guarding. - 8.0A rectification in small package.

文件：461.87 Kbytes 页数：4 Pages

COMCHIP

典琦

Standard Schottky

Comchip

典琦

SMD Schottky Barrier Diode

Reverse Voltage: 20 ~ 60 Volts Forward Current: 8 A Features: • Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds enviromental standards of MIL-S-19500/228 • Lo

文件：61.59 Kbytes 页数：2 Pages

COMCHIP

典琦

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant.

文件：440.63 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：583.99 Kbytes 页数：4 Pages

CET-MOS

华瑞