FETKY MOSFET / Schottky Diode

Description The FETKY family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining

文件：164.18 Kbytes 页数：8 Pages

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FETKY?줞OSFET / Schottky Diode

Description The FETKY family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining

文件：134.21 Kbytes 页数：8 Pages

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FETKY MOSFET / Schottky Diode

Description The FETKY family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining

文件：164.18 Kbytes 页数：8 Pages

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HEXFET Power MOSFET(-20V, 0.018ohm)

Description New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer wi

文件：164.45 Kbytes 页数：8 Pages

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HEXFET Power MOSFET

Description New P-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer

文件：241.84 Kbytes 页数：9 Pages

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HEXFET Power MOSFET

Description New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer

文件：126.82 Kbytes 页数：9 Pages

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HEXFET Power MOSFET

Description New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer

文件：108.61 Kbytes 页数：8 Pages

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Dual P-Channel 30 V (D-S) MOSFET

Features Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Available in Tape & Reel Lead-Free

文件：351.79 Kbytes 页数：8 Pages

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HEXFET짰 Power MOSFET

Description New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer wi

文件：167.52 Kbytes 页数：8 Pages

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HEXFET POWER MOSFET

HEXFET Power MOSFET • Trench Technology • Ultra Low On-Resistance • Dual P-Channel MOSFET • Low Profile (

文件：318.07 Kbytes 页数：9 Pages

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