| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IRF732 | N-Channel Power MOSFETs, 5.5 A, 350 V/400 V Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VQSRatedat±20V •SiliconGateforFastSwitchingSp | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
IRF732 | N-Channel Power MOSFETs, 5.5A, 350 V/400V Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VQSRatedat±20V •SiliconGateforFastSwitchingSp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
IRF732 | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
HEXFET짰 Power MOSFET Description NewtrenchHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththeruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,providesthedesignerwit | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | ||
Dual P-Channel MOSFET ●TrenchTechnology ●UltraLowOn-Resistance ●LowProfile( | UMWUMW 友台友台半导体 |  | ||
FETKY MOSFET / Schottky Diode Description TheFETKYfamilyofco-packagedHEXFETsandSchottkydiodesofferthedesigneraninnovativeboardspacesavingsolutionforswitchingregulatorapplications.Generation5HEXFETsutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Combining | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
FETKY?줞OSFET / Schottky Diode Description TheFETKYfamilyofco-packagedHEXFETsandSchottkydiodesofferthedesigneraninnovativeboardspacesavingsolutionforswitchingregulatorapplications.Generation5HEXFETsutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Combining | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
FETKY MOSFET / Schottky Diode Description TheFETKYfamilyofco-packagedHEXFETsandSchottkydiodesofferthedesigneraninnovativeboardspacesavingsolutionforswitchingregulatorapplications.Generation5HEXFETsutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Combining | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
HEXFET Power MOSFET(-20V, 0.018ohm) Description NewtrenchHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththeruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,providesthedesignerwi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
Dual P-Channel MOSFET ●TrenchTechnology ●UltraLowOn-Resistance ●LowProfile( | UMWUMW 友台友台半导体 | | ||
HEXFET Power MOSFET Description NewP-ChannelHEXFETpowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththeruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,providesthedesigner | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
HEXFET Power MOSFET Description NewP-ChannelHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththeruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,providesthedesigner | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
HEXFET Power MOSFET Description NewtrenchHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththeruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,providesthedesigner | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
Dual P-Channel 30 V (D-S) MOSFET TrenchTechnology UltraLowOn-Resistance DualP-ChannelMOSFET AvailableinTape&Reel Lead-Free Features | UMWUMW 友台友台半导体 | | ||
HEXFET짰 Power MOSFET Description NewtrenchHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththeruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,providesthedesignerwi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
Dual P-Channel 30 V (D-S) MOSFET TrenchTechnology UltraLowOn-Resistance DualP-ChannelMOSFET AvailableinTape&Reel Lead-Free Features | UMWUMW 友台友台半导体 | | ||
HEXFET POWER MOSFET HEXFETPowerMOSFET •TrenchTechnology •UltraLowOn-Resistance •DualP-ChannelMOSFET •LowProfile( | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
FETKY MOSFET & Schottky Diode | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
FETKY MOSFET & Schottky Diode | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
Ideal For Buck Regulator Applications | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |
详细参数
- 型号：
IRF732
- 功能描述：
MOSFET P-CH 30V 4.7A 8-SOIC
- RoHS：
否
- 类别：
分离式半导体产品 >> FET - 单
- 系列：
FETKY™
- 标准包装：
1,000
- 系列：
MESH OVERLAY™ FET
- 型：
MOSFET N 通道，金属氧化物 FET
- 特点：
逻辑电平门
- 漏极至源极电压(Vdss)：
200V 电流 - 连续漏极(Id) @ 25°
- C：
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C：
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）：
4V @ 250µA 闸电荷(Qg) @
- Vgs：
72nC @ 10V 输入电容(Ciss) @
- Vds：
1560pF @ 25V 功率 -
- 最大：
40W
- 安装类型：
通孔
- 封装/外壳：
TO-220-3 整包
- 供应商设备封装：
TO-220FP
- 包装：
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
16+ |
原厂封装 |
2000 |
原装现货假一罚十 |
询价 | ||
IR |
23+ |
TO-220 |
6000 |
特价库存 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IR/FSC |
1738+ |
TO-220 |
8529 |
科恒伟业!只做原装正品,假一赔十! |
询价 | ||
ST |
新 |
21 |
全新原装 货期两周 |
询价 | |||
23+ |
N/A |
30650 |
正品授权货源可靠 |
询价 | |||
F |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
询价 | ||
VB |
21+ |
TO-220 |
10000 |
原装现货假一罚十 |
询价 | ||
F |
22+ |
TO-220 |
6000 |
十年配单,只做原装 |
询价 | ||
VB |
TO-220 |
68900 |
原包原标签100%进口原装常备现货! |
询价 |
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