N-Channel Power MOSFETs, 5.5A, 350 V/400V

Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VQS Rated at ±20 V • Silicon Gate for Fast Switching Sp

文件：177.13 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Power MOSFETs, 5.5 A, 350 V/400 V

Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VQS Rated at ±20 V • Silicon Gate for Fast Switching Sp

文件：848.7 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc N-Channel MOSFET Transistor

文件：65 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：IRF7324；Package：SOP-8；Dual P-Channel MOSFET

● Trench Technology ● Ultra Low On-Resistance ● Low Profile (

文件：365.27 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：IRF7324；Package：SOP-8；Dual P-Channel MOSFET

● Trench Technology ● Ultra Low On-Resistance ● Low Profile (

文件：365.27 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：IRF7328；Package：SOP-8；Dual P-Channel 30 V (D-S) MOSFET

Trench Technology

Ultra Low On-Resistance
Dual P-Channel MOSFET
Available in Tape & Reel
Lead-Free Features

文件：402.14 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：IRF7328；Package：SOP-8；Dual P-Channel 30 V (D-S) MOSFET

Trench Technology

Ultra Low On-Resistance
Dual P-Channel MOSFET
Available in Tape & Reel
Lead-Free Features

文件：402.14 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：IRF7328；Package：SOP-8；Dual P-Channel 30 V (D-S) MOSFET

Features Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Available in Tape & Reel Lead-Free

文件：351.79 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

Trans MOSFET P-CH 30V 4.7A 8-Pin SOIC

NJS

HEXFET짰 Power MOSFET

Description New trench HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer wit

文件：104.75 Kbytes 页数：8 Pages

IRF