Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Powe

文件：166.34 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Powe

文件：166.34 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

文件：234.73 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Powe

文件：166.34 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：898.57 Kbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Low Area Specific On-Resistance

FEATURES • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry

文件：293.32 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技