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IRF730ASTRL

Power MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe

VishayVishay Siliconix

威世科技威世科技半导体

IRF730ASTRLPBF

Power MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe

VishayVishay Siliconix

威世科技威世科技半导体

IRF730ASTRLPBFA

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRF730ASTRRPBF

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe

VishayVishay Siliconix

威世科技威世科技半导体

IRF730B

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF730B

LowAreaSpecificOn-Resistance

FEATURES •OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) •OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry

VishayVishay Siliconix

威世科技威世科技半导体

IRF730B

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

KERSEMI

Kersemi Electronic Co., Ltd.

IRF730B

N-ChannelMOSFETTransistor

DESCRIPTION •DrainCurrent–ID=5.5A@TC=25℃ •DrainSourceVoltage- :VDSS=400V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) •FastSwitchingSpeed APPLICATIONS •Designedespeciallyforhighvoltage,highspeedapplications, suchasoff-lineswitchingpowers

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF730B

DSeriesPowerMOSFET

FEATURES •OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) •OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry -LowFigure-of-Merit(

VishayVishay Siliconix

威世科技威世科技半导体

IRF730F

6.0A,400V,1.0廓N-CHANNELPOWERMOSFET

DESCRIPTION ➤IRF730is400VHighvoltageN-Channelenhancement modepowerMOS-FETchipfabricatedinadvanced siliconepitaxialplanartechnology; ➤Advancedterminationschemetoprovideenhancedvoltage-blockingcapability; ➤AvalancheEnergySpecified; ➤Source-to-DrainDiodeRecov

FS

First Silicon Co., Ltd

详细参数

  • 型号:

    IRF730ASTRL

  • 功能描述:

    MOSFET N-Chan 400V 5.5 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
2015+
SMD/DIP
19889
一级代理原装现货,特价热卖!
询价
INTERNATIONA
06+
原厂原装
9016
只做全新原装真实现货供应
询价
IR
23+
TO-263
9500
专业优势供应
询价
VISHAY
1503+
TO-263
3000
就找我吧!--邀您体验愉快问购元件!
询价
VB
21+
D2PAK
10000
原装现货假一罚十
询价
Vishay Siliconix
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原厂渠道,现货配单
询价
VISHAY/威世
23+
D2PAK
18000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
VISHAY/威世
23+
D2PAK
6000
原装正品,支持实单
询价
Vishay Siliconix
2022+
TO-263-3,D2Pak(2 引线 + 接片
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
VISHAY/威世
22+
D2PAK
25000
只做原装进口现货,专注配单
询价
更多IRF730ASTRL供应商 更新时间2025-7-16 9:01:00