IRF1010资料datasheet下载供应代理第2页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRF1010EZLPBF	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZLPBF	文件：413.46 Kbytes Page：12 Pages	Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：413.46 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZPBF	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZPBF	文件：413.46 Kbytes Page：12 Pages	Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：413.46 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZS	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZS	文件：287.5 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=75A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：287.5 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IRF1010EZSPBF	文件：285.31 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：285.31 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZSPBF	文件：413.46 Kbytes Page：12 Pages	Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：413.46 Kbytes 页数：12 Pages	IRF	IRF
IRF1010EZSTRLP	文件：413.46 Kbytes Page：12 Pages	Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：413.46 Kbytes 页数：12 Pages	IRF	IRF
IRF1010N	文件：211.92 Kbytes Page：8 Pages	Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?? VDSS = 55V RDS(on) = 11mΩ ID = 85A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig 文件：211.92 Kbytes 页数：8 Pages	IRF	IRF

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技术参数

OPN：
IRF1010EPBF
Qualification：
Non-Automotive
Package name：
TO220
VDS max：
60 V
RDS (on) @10V max：
12 mΩ
ID @25°C max：
84 A
QG typ @10V：
86.6 nC
Polarity：
N
VGS(th) min：
2 V
VGS(th) max：
4 V
VGS(th)：
3 V
Technology：
IR MOSFET™

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市昌和盛利电子有限公司	IRF1010		23+	NA	12328	原装正品价格优惠,长期优势供应	询价
柒号芯城电子商务(深圳)有限公司	IRF1010	IR	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市一线半导体有限公司	IRF1010	IR	24+	TO-220	5000		询价
深圳市勤思达科技有限公司	IRF1010	IR	15+	TO-220	11560	全新原装,现货库存,长期供应	询价
深圳市亿智腾科技有限公司	IRF1010	IR	24+	TO-220	6430	原装现货/欢迎来电咨询	询价
瀚佳科技(深圳)有限公司	IRF1010	IR	24+	TO-220	36500	原装现货/放心购买	询价
深圳市星佑电子有限公司	IRF1010	IR/国际整流器	21+	原厂原封	5000	全新原装现货价优	询价
深圳市蓝山航业科技有限公司	IRF1010		24+	TO-220	500000	行业低价,代理渠道	询价
深圳市美思瑞电子科技有限公司	IRF1010	IR	22+	TO-220	6000	现货,原厂原装假一罚十!	询价
深圳市河锋鑫科技有限公司	IRF1010	IR	22+	TO-220	6000	终端可免费供样,支持BOM配单	询价

更多IRF1010供应商更新时间2025-10-4 14:01:00

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