IRF3305

AUTOMOTIVE MOSFET

VDSS=55V RDS(on)=8.0mΩ ID=75A

IRF3305B

isc N-Channel MOSFET Transistor

·FEATURES ·DrainCurrent–ID=140A@TC=25℃ ·DrainSourceVoltage- :VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·DESCRITION ·UltraLowOn-resistance ·Fa

IRF3305PBF

HEXFET짰 Power MOSFET

VDSS=55V RDS(on)=8.0mΩ ID=75A

IRF331

N-Channel Power MOSFETs, 5.5A, 350 V/400V

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VQSRatedat±20V •SiliconGateforFastSwitchingSp

IRF331

isc N-Channel MOSFET Transistor

DESCRIPTION •VGSRatedat±20V •SiliconGateforFastSwitchingSpeeds •IDSS,VDS(on),SOAandVGS(th)specifiedatElevatedtemperature •Rugged APPLICATIONS •Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcont

IRF331

N-Channel Power MOSFETs, 5.5 A, 350 V/400 V

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VQSRatedat±20V •SiliconGateforFastSwitchingSp

IRF331

N-CHANNEL POWER MOSFETS

FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●LowInputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard)

IRF3315

N-Channel MOSFET Transistor

•DESCRITION •Combinewiththefastswitchingspeedandruggedizeddevicedesign •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤70mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperati

IRF3315

Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF3315L

Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide