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IRF342

N-Channel Power MOSFETs, 10A, 350V/400V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF342

N-CHANNEL POWER MOSFETS

N-ChannelPowerMOSFETs

SamsungSamsung semiconductor

三星三星半导体

IRF342

isc N-Channel MOSFET Transistor

DESCRIPTION •VGSRatedat±20V •SiliconGateforFastSwitchingSpeeds •IDSS,VDS(on),SOAandVGS(th)specifiedatElevatedtemperature •Rugged APPLICATIONS •Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcont

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF343

isc N-Channel MOSFET Transistor

DESCRIPTION •VGSRatedat±20V •SiliconGateforFastSwitchingSpeeds •IDSS,VDS(on),SOAandVGS(th)specifiedatElevatedtemperature •Rugged APPLICATIONS •Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcont

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF343

N-CHANNEL POWER MOSFETS

N-ChannelPowerMOSFETs

SamsungSamsung semiconductor

三星三星半导体

IRF343

N-Channel Power MOSFETs, 10A, 350V/400V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF350

N-Channel Power MOSFETs, 15A, 350V/400V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF350

15A, 400V, 0.300 Ohm, N-Channel Power MOSFET

ThisisanN-Channelenhancementmodesilicongatepowerfieldeffecttransistordesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower. They

Intersil

Intersil Corporation

IRF350

TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.300ohm, Id=14A)

TheHEXFET®technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddi

IRF

International Rectifier

IRF350

N-CHANNEL POWER MOSFETS

FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半导体

详细参数

  • 型号:

    IRF

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Inductors Epoxy Conformal Coated Uniform Roll Coated

供应商型号品牌批号封装库存备注价格
IR
22+
263
6000
终端可免费供样,支持BOM配单
询价
IR
23+
263
8000
专注配单,只做原装进口现货
询价
IR
23+
263
8000
专注配单,只做原装进口现货
询价
IR
23+
263
7000
询价
IR
17+
DIP-4
6200
100%原装正品现货
询价
IR-韩国产
2020+
TO-220
16402
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
IR
1725+
?
7500
只做原装进口,假一罚十
询价
0
询价
IR
23+
NA
2860
原装正品代理渠道价格优势
询价
IRF
4000一盘
13+
0
SOP8
询价
更多IRF供应商 更新时间2025-6-28 14:00:00