首页 >IPD1-04-S-K-M>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SURFACEMOUNTGENERALPURPOSESILICONRECTIFIER | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
GENERALPURPOSERECTIFIER1.0AMP,200THRU1,000VOLTS DESCRIPTION: TheCENTRALSEMICONDUCTORCMR1-02Mseries1.0Ampsurfacemountsiliconrectifierisawellconstructed,highlyreliablecomponentdesignedforuseinalltypesofcommercial,industrial,entertainment,computer,andautomotiveapplicationswheresmallsizeisrequired.TheSMAcas | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SURFACEMOUNTSILICONGENERALPURPOSERECTIFIERS | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SURFACEMOUNTGENERALPURPOSESILICONRECTIFIER1AMP | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SURFACEMOUNTGENERALPURPOSERECTIFIER GeneralPurposeRectifier 1AmpGlassPassivatedRectifierChip PROCESSDETAILS ProcessGLASSPASSIVATEDMESA DieSize42.5x42.5MILS DieThickness12.5MILS AnodeBondingPadArea32x32MILS TopSideMetalizationNi/Au-5,000Å/2,000Å BackSideMetalizationNi/ | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
1AmpGlassPassivatedRectifierChip GeneralPurposeRectifier 1AmpGlassPassivatedRectifierChip PROCESSDETAILS ProcessGLASSPASSIVATEDMESA DieSize42.5x42.5MILS DieThickness12.5MILS AnodeBondingPadArea32x32MILS TopSideMetalizationNi/Au-5,000Å/2,000Å BackSideMetalizationNi/ | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
1AmpGlassPassivatedRectifierChip GeneralPurposeRectifier 1AmpGlassPassivatedRectifierChip PROCESSDETAILS ProcessGLASSPASSIVATEDMESA DieSize42.5x42.5MILS DieThickness12.5MILS AnodeBondingPadArea32x32MILS TopSideMetalizationNi/Au-5,000Å/2,000Å BackSideMetalizationNi/ | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
1AmpGlassPassivatedRectifierChip GeneralPurposeRectifier 1AmpGlassPassivatedRectifierChip PROCESSDETAILS ProcessGLASSPASSIVATEDMESA DieSize42.5x42.5MILS DieThickness12.5MILS AnodeBondingPadArea32x32MILS TopSideMetalizationNi/Au-5,000Å/2,000Å BackSideMetalizationNi/ | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SURFACEMOUNTHIGHVOLTAGERECTIFIER GeneralPurposeRectifier 1AmpGlassPassivatedRectifierChip PROCESSDETAILS ProcessGLASSPASSIVATEDMESA DieSize42.5x42.5MILS DieThickness12.5MILS AnodeBondingPadArea32x32MILS TopSideMetalizationNi/Au-5,000Å/2,000Å BackSideMetalizationNi/ | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
1AmpGlassPassivatedRectifierChip GeneralPurposeRectifier 1AmpGlassPassivatedRectifierChip PROCESSDETAILS ProcessGLASSPASSIVATEDMESA DieSize42.5x42.5MILS DieThickness12.5MILS AnodeBondingPadArea32x32MILS TopSideMetalizationNi/Au-5,000Å/2,000Å BackSideMetalizationNi/ | CentralCentral Semiconductor Corp 美国中央半导体 | Central |
产品属性
- 产品编号：
IPD1-04-S-K-M
- 制造商：
Samtec Inc.
- 类别：
连接器，互连器件 > 矩形连接器外壳
- 系列：
Mini Mate® IPD1
- 包装：
散装
- 连接器类型：
插座
- 触头类型：
母形插口
- 针位数：
4
- 间距：
0.100"（2.54mm）
- 安装类型：
自由悬挂
- 触头端接：
压接
- 紧固类型：
销锁
- 颜色：
白色
- 特性：
拾放，分极键
- 描述：
CONN RCPT HSG 4POS 2.54MM
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Samtec |
2021+ |
1 |
285000 |
专供连接器,军工合格供应商! |
询价 | ||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
samtec |
24+ |
con |
2500 |
中国星坤品牌降本替代型号X2530H-04-PT |
询价 | ||
Samtec |
24+ |
N/A |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
SAMTEC |
20+ |
连接器 |
2963 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Samtec |
550 |
公司优势库存 热卖中!! |
询价 | ||||
SAMTEC |
2132+ |
CONN |
6000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
SAMTEC |
24+ |
CONN |
5000 |
询价 | |||
SAMTEC |
24+ |
CONN |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 | ||
SAMTEC |
27 |
询价 |
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