1 Amp Glass Passivated Rectifier Chip

General Purpose Rectifier 1 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 42.5 x 42.5 MILS Die Thickness 12.5 MILS Anode Bonding Pad Area 32 x 32 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization Ni/

文件：405.37 Kbytes 页数：2 Pages

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1 Amp Glass Passivated Rectifier Chip

General Purpose Rectifier 1 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 42.5 x 42.5 MILS Die Thickness 12.5 MILS Anode Bonding Pad Area 32 x 32 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization Ni/

文件：405.37 Kbytes 页数：2 Pages

Central

SURFACE MOUNT HIGH VOLTAGE RECTIFIER

General Purpose Rectifier 1 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 42.5 x 42.5 MILS Die Thickness 12.5 MILS Anode Bonding Pad Area 32 x 32 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization Ni/

文件：106.43 Kbytes 页数：2 Pages

Central

SURFACE MOUNT HIGH VOLTAGE RECTIFIER

General Purpose Rectifier 1 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 42.5 x 42.5 MILS Die Thickness 12.5 MILS Anode Bonding Pad Area 32 x 32 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization Ni/

文件：107.68 Kbytes 页数：2 Pages

Central