丝印：030N03F2；Package：PG-TO252-3；MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features • Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：947.71 Kbytes 页数：13 Pages

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OptiMOS?? Power-Transistor

Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • Pb-free plating; Ro

文件：308.88 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：038N06NS；Package：PG-TO252-3；StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：997.86 Kbytes 页数：11 Pages

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N-Channel MOSFET Transistor

文件：335.17 Kbytes 页数：2 Pages

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OpiMOS 3 Power-Transistor

文件：420.4 Kbytes 页数：10 Pages

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OpiMOS 3 Power-Transistor

文件：420.4 Kbytes 页数：10 Pages

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N-Channel MOSFET Transistor

文件：336.35 Kbytes 页数：2 Pages

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OptiMOS(TM)3 Power-Transistor

文件：221.31 Kbytes 页数：9 Pages

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丝印：033N06N；Package：PG-TO252-3；OptiMOSTM Power-Transistor, 60 V

文件：871.87 Kbytes 页数：11 Pages

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N-Channel MOSFET Transistor

文件：336.25 Kbytes 页数：2 Pages

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无锡固电