IPD030N03LF2S

丝印：030N03F2；Package：PG-TO252-3；MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features •Optimizedforawiderangeofapplications •N‑channel,logiclevel •100%avalanchetested •175°Crated •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21

IPD031N03LG

OptiMOS?? Power-Transistor

Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Avalancherated •Pb-freeplating;Ro

IPD031N06L3 G

20V-300V N-Channel Power MOSFET; • Excellent gate charge x R DS(on) product (FOM)\n• Very low on-resistance R DS(on)\n• Ideal for fast switching applications\n• RoHS compliant - halogen free\n• MSL1 rated\n\n优势:\n• Highest system efficiency\n• Less paralleling required\n• Increased power density\n• System cost reduction\n• Very low voltage overshoot\n;

OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.\n

IPD038N06NF2S

丝印：038N06NS；Package：PG-TO252-3；StrongIRFETTM2 Power-Transistor

Features •Optimizedforwiderangeofapplications •N-channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPD031N03L

N-Channel MOSFET Transistor

IPD031N03L-G

OpiMOS 3 Power-Transistor

IPD031N03M G

MOSFET N-CH 30V 90A TO252-3;

IPD031N03M-G

OpiMOS 3 Power-Transistor

IPD031N06L3

N-Channel MOSFET Transistor

IPD031N06L3G

OptiMOS(TM)3 Power-Transistor