OptiMOS3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; Halogen Free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switch

文件：979.65 Kbytes 页数：12 Pages

INFINEON

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N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 21A@ TC=25℃ · Drain Source Voltage -VDSS= 150V(Min) · Static Drain-Source On-Resistance -RDS(on) = 53mΩ(Max)@VGS= 10V DESCRIPTION · DC-DC Converters · Motor Drive · Power Switch

文件：335.54 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel, normal level

文件：967.66 Kbytes 页数：12 Pages

INFINEON

英飞凌

N-channel, normal level

文件：967.66 Kbytes 页数：12 Pages

INFINEON

英飞凌

OptiMOS™3 Power-Transistor

• N-channel, normal level\n• Excellent gate charge x R DS(on) product (FOM)\n• Very low on-resistance R DS(on)\n• 175 °C operating temperature\n• Pb-free lead plating; RoHS compliant; Halogen Free\n• Qualified according to JEDEC1) for target application\n• Ideal for high-frequency switching and sync;

Infineon

英飞凌