IPB60R380C6资料使用说明书原装现货英飞凌-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业
IPB60R380C6	文件：189.79 Kbytes Page：2 Pages	Isc N-Channel MOSFET Transistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPB60R380C6	文件：1.4056 Mbytes Page：19 Pages	MOSFET Metal Oxide Semiconductor Field Effect Transistor Features ExtermelylowlossesduetoverylowFOMRdsonQgandEoss Veryhighcommutationruggedness Easytouse/drive,Pb-freeplating,Halogenfree FullyqualifiedaccordingtoJEDECforIndustrialApplications	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPB60R380C6	文件：2.068659 Mbytes Page：19 Pages	Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresulting	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPB60R380C6	文件：1.41181 Mbytes Page：19 Pages	Metal Oxide Semiconductor Field Effect Transistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IIPD60R380C6	文件：335.95 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω·Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IIPP60R380C6	文件：338.81 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω·Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobust	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPA60R380C6	文件：1.4056 Mbytes Page：19 Pages	MOSFETMetalOxideSemiconductorFieldEffectTransistor Features ExtermelylowlossesduetoverylowFOMRdsonQgandEoss Veryhighcommutationruggedness Easytouse/drive,Pb-freeplating,Halogenfree FullyqualifiedaccordingtoJEDECforIndustrialApplications	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPA60R380C6	文件：1.41181 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPA60R380C6	文件：316.77 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackaging •Highspeedswitching •Veryhighcommutationruggedness •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz •APPLICATIONS •PFCstages,hardswitchingPWMstagesandresonants	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPA60R380C6	文件：2.068659 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresulting	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPD60R380C6	文件：2.068659 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresulting	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPD60R380C6	文件：1.41181 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPD60R380C6	文件：335.95 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω·Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPI60R380C6	文件：2.068659 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresulting	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPI60R380C6	文件：303.6 Kbytes Page：3 Pages	nullIscN-ChannelMOSFETTransistor •FEATURES •WithTo-262(I2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPI60R380C6	文件：1.4056 Mbytes Page：19 Pages	MOSFETMetalOxideSemiconductorFieldEffectTransistor Features ExtermelylowlossesduetoverylowFOMRdsonQgandEoss Veryhighcommutationruggedness Easytouse/drive,Pb-freeplating,Halogenfree FullyqualifiedaccordingtoJEDECforIndustrialApplications	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPI60R380C6	文件：1.41181 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPP60R380C6	文件：1.4056 Mbytes Page：19 Pages	MOSFETMetalOxideSemiconductorFieldEffectTransistor Features ExtermelylowlossesduetoverylowFOMRdsonQgandEoss Veryhighcommutationruggedness Easytouse/drive,Pb-freeplating,Halogenfree FullyqualifiedaccordingtoJEDECforIndustrialApplications	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPP60R380C6	文件：2.068659 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresulting	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPP60R380C6	文件：338.81 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω·Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobust	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司

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详细参数

型号：
IPB60R380C6
功能描述：
MOSFET COOL MOS
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市中利达电子科技有限公司	IPB60R380C6	INFINEON/英飞凌	23+	TO-263	76000	IR英飞凌VISHAY专做全新原装进口正品假一赔百,可开13	询价
深圳市英科美电子有限公司	IPB60R380C6	INFINEON/英飞凌	2021+	SOT-263	17061	原装进口假一罚十	询价
深圳市宏捷佳电子科技有限公司	IPB60R380C6	INFINEON	23+	D2PAK(TO-263)	12300	全新原装真实库存含13点增值税票!	询价
深圳市天成基业科技有限公司	IPB60R380C6	INFINEON/英飞凌	21+	TO-263	3704	全新、原装	询价
深圳市坤融电子科技有限公司	IPB60R380C6	INFINEON/英飞凌	22+	TO-263	1217	只做原装进口免费送样!!	询价
深圳兆威电子有限公司	IPB60R380C6	INFINEON/英飞凌	23+	TO-263	75000	只做原装！全系列供应可长期供货稳定价格优势！	询价
深圳市奥皇科技有限公司	IPB60R380C6	Infineon/英飞凌	22+	PG-TO263-3	25414	只做原装现货工厂免费出样欢迎咨询订单	询价
深圳市河锋鑫科技有限公司	IPB60R380C6	英飞翎	17+	D2PAK(TO-263)	31518	原装正品可含税交易	询价
深圳市创新迹电子有限公司	IPB60R380C6	INFINEON/英飞凌	2021+	TO-263	9000	原装现货,随时欢迎询价	询价
深圳市特莱科技有限公司	IPB60R380C6	INFINEON/英飞凌	21+23+	TO-263	3666	16年电子元件现货供应商终端BOM表可配单提供样品	询价

更多IPB60R380C6供应商更新时间2024-4-23 8:32:00

详细参数

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