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零件编号	下载&订购	功能描述	制造商&上传企业
IPB65R420CFD	文件：7.64783 Mbytes Page：21 Pages	650V CoolMOS C6 CFD Power Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPB65R420CFD	文件：4.60565 Mbytes Page：21 Pages	Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPB65R420CFD	文件：189.44 Kbytes Page：2 Pages	Isc N-Channel MOSFET Transistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
65R420	文件：461.65 Kbytes Page：6 Pages	11A竊?50VN-CHANNELMOSFET	KIAGuangdong Keyia Semiconductor Technology Co., Ltd 可易亚半导体广东可易亚半导体科技有限公司
IIPP65R420CFD	文件：339.05 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.42Ω·Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IIPW65R420CFD	文件：335.46 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤420mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPA65R420CFD	文件：4.60565 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPA65R420CFD	文件：7.64783 Mbytes Page：21 Pages	650VCoolMOSC6CFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPA65R420CFD	文件：270.11 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220FPackage •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.42Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplicati	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPD65R420CFD	文件：7.64783 Mbytes Page：21 Pages	650VCoolMOSC6CFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPD65R420CFD	文件：4.60565 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPD65R420CFDA	文件：1.31097 Mbytes Page：14 Pages	MetalOxideSemiconductorFieldEffectTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPI65R420CFD	文件：4.60565 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPI65R420CFD	文件：7.64783 Mbytes Page：21 Pages	650VCoolMOSC6CFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPI65R420CFD	文件：331.5 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.42Ω·Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPP65R420CFD	文件：7.64783 Mbytes Page：21 Pages	650VCoolMOSC6CFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPP65R420CFD	文件：4.60565 Mbytes Page：21 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPP65R420CFD	文件：339.05 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhileoffering anextremelyfastandrobustbodydiode •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.42Ω·Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPW65R420CFD	文件：335.46 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤420mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPW65R420CFD	文件：7.64783 Mbytes Page：21 Pages	650VCoolMOSC6CFDPowerTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •Ultra-fastbodydiode •Veryhighcommutationruggedness •ExtremelylowlossesduetoverylowFOMRdso	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司

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详细参数

型号：
IPB65R420CFD
功能描述：
MOSFET CoolMOS 650V 420mOhm CFD2 N-Chan MOSFET
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宏捷佳电子科技有限公司	IPB65R420CFD	IR	23+	PG-TO263	12300	全新原装真实库存含13点增值税票!	询价
深圳市高捷芯城科技有限公司	IPB65R420CFD	Infineon(英飞凌)	23+	TO-263	8498	支持大陆交货,美金交易。原装现货库存。	询价
深圳市达恩科技有限公司	IPB65R420CFD	Infineon	18+	NA	3000	进口原装正品优势供应QQ3171516190	询价
深圳市华来深电子有限公司	IPB65R420CFD	INFINE0N	23+	TO-263	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳市百视威讯电子科技有限公司	IPB65R420CFD		23+	N/A	35700	正品授权货源可靠	询价
深圳兆威电子有限公司	IPB65R420CFD	VB	2019	PG-TO263	55000	绝对原装正品假一罚十!	询价
中天科工半导体（深圳）有限公司	IPB65R420CFD	Infineon	20+	原装	65790	原装优势主营型号-可开原型号增税票	询价
深圳市威尔健半导体有限公司	IPB65R420CFD	中性	23+	SOT-23	69820	终端可以免费供样,支持BOM配单!	询价
深圳市艾宇欣科技有限公司	IPB65R420CFD	Infineon	1931+	N/A	1000	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市易讯博科技有限公司	IPB65R420CFD	Infineon	22+	NA	493	加我QQ或微信咨询更多详细信息,	询价

更多IPB65R420CFD供应商更新时间2024-4-25 15:30:00

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