首页 >IPB65R310CFD>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IPB65R310CFD | 650V CoolMOS C6 CFD Power Transistor 650V CoolMOS C6 CFDA Power Transistor Applications 650V CoolMOS CFD is especially suitable for resonant switching PWM stages for e.g. PC Silverbox, LCD TV, Lighting, Server and Telecom 文件:6.65181 Mbytes 页数:20 Pages | Infineon 英飞凌 | Infineon | |
IPB65R310CFD | 650V CoolMOS C6 CFD Power Transistor 650V CoolMOS C6 CFDA Power Transistor Applications 650V CoolMOS CFD is especially suitable for resonant switching PWM stages for e.g. PC Silverbox, LCD TV, Lighting, Server and Telecom 文件:6.65181 Mbytes 页数:20 Pages | Infineon 英飞凌 | Infineon | |
IPB65R310CFD | 丝印:D2PAK;Package:TO-263;Isc N-Channel MOSFET Transistor • FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications 文件:189.57 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | |
Metal Oxide Semiconductor Field Effect Transistor 650V CoolMOS CFDA Power Transistor Applications 650V CoolMOS CFDA is designed for switching applications. 文件:1.7849 Mbytes 页数:15 Pages | Infineon 英飞凌 | Infineon | ||
IPB65R310CFD | 500 V-950 V CoolMOS™ N 沟道功率 MOSFET Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7\n 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation • 650V technology with integrated fast body diode\n• Limited voltage overshoot during hard commutation\n• Significant Qg reduction compared to 600V CFD technology\n• Tighter RDS(on) max to RDS(on) typ window\n• Easy to design-in\n• Lower price compared to 600V CFD technology\n\n优势:\n• Low switching ; | Infineon 英飞凌 | Infineon | |
650V、N 通道、最大 310 mΩ、汽车 MOSFET、D2PAK、CoolMOS ™ CFDA 650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provide • First 650V automotive qualified technology with integrated fast body diode on the market\n• Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt\n• Low gate charge value Q g\n• Low Q rr at repetitive commutation on body diode & low Q oss\n• Reduced turn on and turn of ; | Infineon 英飞凌 | Infineon |
技术参数
- OPN:
IPB65R310CFDATMA1/IPB65R310CFDATMA2
- Qualification:
Non-Automotive
- Package name:
PG-TO263-3/PG-TO263-3
- VDS max:
650 V
- RDS (on) @10V max:
310 mΩ
- ID @25°C max:
11.4 A
- QG typ @10V:
41 nC
- Special Features:
fast recovery diode
- Polarity:
N
- Operating Temperature min:
-55 °C
- VGS(th) min:
3.5 V
- VGS(th) max:
4.5 V
- Technology:
CoolMOS™ CFD2
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
TO263 |
4524 |
原厂直供,支持账期,免费供样,技术支持 |
询价 | ||
INFINEON/英飞凌 |
25+ |
TO263 |
32360 |
INFINEON/英飞凌全新特价IPB65R310CFD即刻询购立享优惠#长期有货 |
询价 | ||
INFINEON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
INFINE0N |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
INFINEON |
25+23+ |
New |
31893 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
INFINE0N |
21+ |
PG-TO263-3 |
32568 |
100%进口原装!长期供应!绝对优势价格(诚信经营 |
询价 | ||
INFINEON/英飞凌 |
2447 |
TO263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
INFINEON/英飞凌 |
21+ |
TO263 |
1709 |
询价 | |||
INFINEON/英飞凌 |
24+ |
TO263 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 |
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