首页 >IPB60R299CP>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IPB60R299CP | CoolMOSTM Power Transistor Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisdesignedfor: HardswitchingSMPStopologies | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | |
IPB60R299CP | Isc N-Channel MOSFET Transistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
CoolMOS Power Transistor Features •Lowestfigure-of-meritRonxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •AutomotiveAECQ101qualified •Greenpackage(RoHScompliant) CoolMOSCPAisspeciallydesignedfor: •DC/DCconvertersforAutomotiveApplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.299Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤299mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
CoolMosPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplica | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
CoolMOSPowerTransistor Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) •Pb-freeleadplating;RoHScompliant;Halogenfreemoldcompound CoolMOSCPisspeciallydesignedfor: | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
CoolMOSPowerTransistor Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: HardswitchingSMPStopologies | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
iscN-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.299Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
600VCoolMOSCPPowerTransistor Description TheCoolMOS™CPseriesoffersdeviceswhichprovideallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse.Extremelylowswitchingandconductionlossesmakeswitchingapplicationsevenmoreefficient,morecompact,lighter,andcooler. Features •Reducedboar | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
CoolMOSPowerTransistor CoolMOS®PowerTransistor Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: Hardswi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.299Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤299mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
CoolMOSPowerTransistor Features •Lowestfigure-of-meritRonxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) •Pb-freeleadplating;RoHScompliant CoolMOSCPisdesignedfor: HardswitchingSMPStopologies | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |
详细参数
- 型号：
IPB60R299CP
- 功能描述：
MOSFET COOL MOS N-CH 600V 31A
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
2019+全新原装正品 |
TO263 |
8950 |
BOM配单专家,发货快,价格低 |
询价 | ||
Infineon |
16+/17+ |
TO-263 |
3500 |
原装正品现货供应56 |
询价 | ||
INFINEON |
23+ |
D2PAK(TO-263) |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
Infineo |
22+ |
TO-263 |
100000 |
原厂订货价格优势,可开13%的增值税票 |
询价 | ||
INFINEON/英飞凌 |
22+ |
TO-263 |
7976 |
原装正品现货 可开增值税发票 |
询价 | ||
INFINEON/英飞凌 |
2021+ |
TO-263 |
9000 |
原装现货,随时欢迎询价 |
询价 | ||
INFINEON/英飞凌 |
21+23+ |
TO-263 |
6499 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
Infineon(英飞凌) |
23+ |
TO-263 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
INFINEON |
08+(pbfree) |
PG-TO263-3D2PAK(TO |
8866 |
询价 | |||
INFINEON |
2016+ |
TO-263 |
6523 |
只做进口原装现货!假一赔十! |
询价 |
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