首页 >IPB60R299CPA>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
IPB60R299CPA | CoolMOS Power Transistor Features •Lowestfigure-of-meritRonxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •AutomotiveAECQ101qualified •Greenpackage(RoHScompliant) CoolMOSCPAisspeciallydesignedfor: •DC/DCconvertersforAutomotiveApplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | ||
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.299Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
N-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤299mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
CoolMosPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplica | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
CoolMOSPowerTransistor Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) •Pb-freeleadplating;RoHScompliant;Halogenfreemoldcompound CoolMOSCPisspeciallydesignedfor: | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
CoolMOSTMPowerTransistor Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisdesignedfor: HardswitchingSMPStopologies | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscN-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.299Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
CoolMOSPowerTransistor Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: HardswitchingSMPStopologies | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
600VCoolMOSCPPowerTransistor Description TheCoolMOS™CPseriesoffersdeviceswhichprovideallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse.Extremelylowswitchingandconductionlossesmakeswitchingapplicationsevenmoreefficient,morecompact,lighter,andcooler. Features •Reducedboar | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
MetalOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.299Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
CoolMOSPowerTransistor CoolMOS®PowerTransistor Features •Lowestfigure-of-meritRONxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant CoolMOSCPisspeciallydesignedfor: Hardswi | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
CoolMOSPowerTransistor Features •Lowestfigure-of-meritRonxQg •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) •Pb-freeleadplating;RoHScompliant CoolMOSCPisdesignedfor: HardswitchingSMPStopologies | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
N-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤299mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |
详细参数
- 型号:
IPB60R299CPA
- 功能描述:
MOSFET COOL MOS
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
1339+ |
TO-263 |
697 |
假一赔万只做原装现货实单可谈 |
询价 | ||
INFINEON/英飞凌 |
20+ |
PG-TO263-3 |
89680 |
现货很近!原厂很远!只做原装 |
询价 | ||
Infineon(英飞凌) |
2022+ |
PG-TO263-3 |
4000 |
Infineon 现货直销 当天发货正品渠道 |
询价 | ||
INFINEON |
22+ |
N/A |
3000 |
原装正品,支持实单,欢迎洽谈 |
询价 | ||
INFINEON/英飞凌 |
21+23+ |
PG-TO263-3 |
9645 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
23+ |
N/A |
46180 |
正品授权货源可靠 |
询价 | |||
VB |
2019 |
PG-TO263-3 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
英飞凌 |
21+ |
PG-TO263-3 |
6000 |
绝对原裝现货 |
询价 | ||
INFINE0N |
21+ |
D2PAK (TO-263) |
32568 |
100%进口原装!长期供应!绝对优势价格(诚信经营 |
询价 | ||
Infineon(英飞凌) |
2112+ |
PG-TO263-3 |
115000 |
1000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 |
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