20V-650V汽车级MOSFET

• N-channel - Enhancement mode\n • • Automotive AEC Q101 qualified\n • • MSL1 up to 260°C peak reflow\n • • 175°C operating temperature\n • • Green package (lead free)\n • • Ultra low Rds(on)\n • • 100% Avalanche tested\n\n优势:\n• world's lowest RDS at 55V (on)  in planar technology\n • highest c;

Infineon

英飞凌

OptiMOS Power-Transistor

文件：161.43 Kbytes 页数：8 Pages

Infineon

英飞凌

OptiMOS Power-Transistor

文件：161.43 Kbytes 页数：8 Pages

Infineon

英飞凌

isc N-Channel MOSFET Transistor

·FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) : 9.1mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ultra Low On-resistance ·

文件：344.66 Kbytes 页数：3 Pages

ISC

无锡固电

N-Channel 60 V (D-S) MOSFET

文件：1.05695 Mbytes 页数：9 Pages

VBSEMI

微碧半导体