IPP80N06S2-09

丝印：2N0609；Package：TO-220；isc N-Channel MOSFET Transistor

·FEATURES ·DrainCurrent–ID=100A@TC=25℃ ·DrainSourceVoltage- :VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on):9.1mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·DESCRITION ·UltraLowOn-resistance ·

IPP80N06S2-09

20V-650V汽车级MOSFET; • N-channel - Enhancement mode\n • Automotive AEC Q101 qualified\n • MSL1 up to 260°C peak reflow\n • 175°C operating temperature\n • Green package (lead free)\n • Ultra low Rds(on)\n • 100% Avalanche tested\n\n优势:\n• world's lowest RDS at 55V (on)  in planar technology\n • highest current capability\n • lowest switching and conduction power losses for highest thermal efficiency\n • robust packages with superior quality and reliability\n • Optimized total gate charge enables smaller driver output stages\n;

IPP80N06S2-09

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SPB80N06S2-09

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SPB80N06S2-09

N-Channel60V(D-S)MOSFET

SPP80N06S2-09

N-Channel60V(D-S)MOSFET

SPP80N06S2-09

iscN-ChannelMOSFETTransistor

SPP80N06S2-09

OptiMOSPower-Transistor