Audio-Frequency General-Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : VCEO= −50V, IC = −150mA (max) High hFE : hFE = 120~400 Excellent hFElinearity : hFE(IC= −0.1mA) / hFE(IC= −2mA) = 0.95 (typ.) Q2: High voltage and high current : VCEO=

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Audio-Frequency General-Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : VCEO= −50V, IC = −150mA (max) High hFE : hFE = 120~400 Excellent hFElinearity : hFE(IC= −0.1mA) / hFE(IC= −2mA) = 0.95 (typ.) Q2: High voltage and high current : VCEO=

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Audio-Frequency General-Purpose Amplifier Applications

Audio-Frequency General-PurposeAmplifier Applications Q1: High voltage and high current : VCEO= −50 V, IC = −150 mA (max) High hFE : hFE = 120~400 Excellent hFElinearity : hFE(IC= −0.1 mA) / hFE(IC= −2 mA) = 0.95 (typ.) Q2: High voltage and high current : VCE

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NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)

For Muting And Switching Applications Including two devices in SM6 (Super mini type with 6 leads) High emitter-base voltage: VEBO = 25V (min) High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA) Low on resistance: RON = 1Ω (typ.)(IB = 5mA)

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NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS)

For Muting and Switching Applications Including two devices in US6 (ultra super mini type with 6 leads) High emitter-base voltage: VEBO = 25V (min) High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA) Low on resistance: RON = 1Ω (typ.)(IB = 5mA)

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DIODE (ULTRAL HIGH SPEED SWITCHING APPLICATIONS)

Ultra-High-Speed Switching Applications ● Small package ● Low forward voltage : VF (3) = 0.92 V (typ.) ● Fast reverse recovery time : trr = 1.6 ns (typ.) ● Small total capacitance : CT = 2.2 pF (typ.)

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Silicon Epitaxial Planar Type Ultra High Speed Switching Application

Ultra High Speed Switching Application ● HN1D02FU is composed of 2 unit of cathode common. ● Low forward voltage : VF (3) = 0.92V (typ.) ● Fast reverse recovery time : trr = 1.6ns (typ.) ● Small total capacitance : CT = 2.2pF (typ.)

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DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)

Ultra High Speed Switching Application ● Small package ● Low forward voltage: VF (3) = 0.92 V (typ.) ● Fast reverse recovery time: trr = 1.6 ns (typ.) ● Small total capacitance: CT = 2.2 pF (typ.)

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DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)

Ultra-High-Speed Switching Applications ● The HN1D02F is composed of two (2) cathode common units. ● Low forward voltage : VF (3) = 0.90 V (typ.) ● Fast reverse recovery time : trr = 1.6 ns (typ.) ● Small total capacitance : CT = 0.9 pF (typ.)

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Silicon Epitaxial Planar Type Ultra High Speed Switching Application

Ultra High Speed Switching Application ● The HN1D02FU is composed of 2 common cathode units. ● Low forward voltage : VF (3) = 0.90V (typ.) ● Fast reverse recovery time : trr = 1.6ns (typ.) ● Small total capacitance : CT = 0.9pF (typ.)

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