HN27C4000G-10

524288-Word 짰8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM

Description TheHitachiHN27C4000isa4-MbitUVerasableandelectricallyprogrammableROMthatisorganized eitheras524288-word×8-bitoras262144-word×16bit,featuringextra-highspeedburstmodethatgives twotimesfaster4-wordor8-byteserialaccessthannormal.Andalsohigh

HN27C4000G-12

524288-Word 짰8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM

Description TheHitachiHN27C4000isa4-MbitUVerasableandelectricallyprogrammableROMthatisorganized eitheras524288-word×8-bitoras262144-word×16bit,featuringextra-highspeedburstmodethatgives twotimesfaster4-wordor8-byteserialaccessthannormal.Andalsohigh

HN27C4000G-15

524288-Word 짰8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM

Description TheHitachiHN27C4000isa4-MbitUVerasableandelectricallyprogrammableROMthatisorganized eitheras524288-word×8-bitoras262144-word×16bit,featuringextra-highspeedburstmodethatgives twotimesfaster4-wordor8-byteserialaccessthannormal.Andalsohigh

HN27C4096HCC

262,144-word x 16-bit CMOS UV Erasable and Programmable ROM

262,144-wordx16-bitCMOSUVErasableandProgrammableROM FEATURES

HN27C4096HCC-85

262,144-word x 16-bit CMOS UV Erasable and Programmable ROM

262,144-wordx16-bitCMOSUVErasableandProgrammableROM FEATURES

HN27C4096HG

262,144-word x 16-bit CMOS UV Erasable and Programmable ROM

262,144-wordx16-bitCMOSUVErasableandProgrammableROM FEATURES

HN27C4096HG-85

262,144-word x 16-bit CMOS UV Erasable and Programmable ROM

262,144-wordx16-bitCMOSUVErasableandProgrammableROM FEATURES

HN28-3-AG

Linear Power Supplies Data Sheet

Description Power-Oneproducestheindustry’sbroadestselectionofLinearpowersupplieswithoutputvoltagesfrom5voltsthrough250volts.Ruggedtechnologyandprovendesignmergetocreatequiet,highly-regulated,dependableDCpower. TheLinearpowersuppliesareapprovedtodomesticand

HN29V1G91T-30

128M X 8-bit AG-AND Flash Memory

Description TheHN29V1G91seriesachievesawritespeedof10Mbytes/sec,whichis5timesfasterthanRenesasspreviousmultilevelcellFlashmemory,using0.13µmprocesstechnologyandAG-AND(AssistGate-AND)typeFlashmemorycellusingmultilevelcelltechnologyprovidesboththemostcost

HN29V51211

512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)

Description TheHitachiHN29V51211SeriesisaCMOSFlashMemorywithANDtypemulti-levelmemorycells.Ithasfullyautomaticprogramminganderasecapabilitieswithasingle3.0Vpowersupply.Thefunctionsarecontrolledbysimpleexternalcommands.TofittheI/Ocardapplications,theunit