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HN1B01F-Y

Audio-Frequency General-Purpose Amplifier Applications

Audio-FrequencyGeneral-PurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCE

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

HN1B01F

Audio-FrequencyGeneral-PurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO=

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

HN1B01F

Audio-FrequencyGeneral-PurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO=

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

HN1B01F

Audio-FrequencyGeneral-PurposeAmplifierApplications

Audio-FrequencyGeneral-PurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCE

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

HN1B01F

SiliconNPNEpitaxialType(PCTProcess)Audio-FrequencyGeneral-PurposeAmplifierApplications

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

HN1B01F

NPNEPITAXIALTYPE(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS)

Audio-FrequencyGeneral-PurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCE

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

HN1B01FU

NPNEPITAXIALTYPE(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS)

AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO=

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

HN1B01FU

SiliconNPNEpitaxialType(PCTProcess)AudioFrequencyGeneralPurposeAmplifierApplications

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

HN1B01FU-GR

Audio-FrequencyGeneral-PurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO=

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

HN1B01FU-Y

Audio-FrequencyGeneral-PurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications Q1: Highvoltageandhighcurrent :VCEO=−50V,IC=−150mA(max) HighhFE:hFE=120~400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Q2: Highvoltageandhighcurrent :VCEO=

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

详细参数

  • 型号:

    HN1B01F-Y

  • 制造商:

    Toshiba America Electronic Components

  • 功能描述:

    Transistor NPN/PNP Dual 50V 0.15A hfe120

供应商型号品牌批号封装库存备注价格
TOS
17+
原厂原装
36500
全新进口原装现货
询价
TOSHIBA
24+
SMD
9200
新进库存/原装
询价
TOSHIBA
23+
SOT163
9526
询价
TOSHIBA
24+
SOT-163
2560
绝对原装!现货热卖!
询价
TOS
23+
SOT23-6
9365
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
TOSHIBA
24+
SOT-163
3000
原装现货假一罚十
询价
TOSHIBA
2016+
SOT163
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
TOS
24+
SOT23-6
5000
全现原装公司现货
询价
SOT-163
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
TOSHIBA
1822+
SOT-163
6852
只做原装正品假一赔十为客户做到零风险!!
询价
更多HN1B01F-Y供应商 更新时间2025-5-4 8:48:00