Silicon Epitaxial Planar Type Ultra High Speed Switching Application

Ultra High Speed Switching Application ● The HN1D02FU is composed of 2 common cathode units. ● Low forward voltage : VF (3) = 0.90V (typ.) ● Fast reverse recovery time : trr = 1.6ns (typ.) ● Small total capacitance : CT = 0.9pF (typ.)

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TOSHIBA Diode Silicon Epitaxial Planar Type

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Switching diode

Feature：High-speed switching\nInternal Connection：Common cathode\nNumber of Circuits：4\nAssembly bases：日本\nRoHS Compatible Product(s) (#)：Available Average Forward Current IO 0.1 A \nReverse Voltage VR 80 V ;

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Silicon Epitaxial Planar Type Ultra High Speed Switching Application

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DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)

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