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HN29V51211T-50

512M AND type Flash Memory More than 32,113-sector (542,581,248-bit)

Description TheHitachiHN29V51211SeriesisaCMOSFlashMemorywithANDtypemulti-levelmemorycells.Ithasfullyautomaticprogramminganderasecapabilitieswithasingle3.0Vpowersupply.Thefunctionsarecontrolledbysimpleexternalcommands.TofittheI/Ocardapplications,theunit

HitachiHitachi Semiconductor

日立日立公司

HN29W12811

128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)

Description TheHitachiHN29W12811SeriesisaCMOSFlashMemorywithANDtypemulti-levelmemorycells.Ithasfullyautomaticprogramminganderasecapabilitieswithasingle3.3Vpowersupply.Thefunctionsarecontrolledbysimpleexternalcommands.TofittheI/Ocardapplications,the

HitachiHitachi Semiconductor

日立日立公司

HN29W12811T-60

128M AND type Flash Memory More than 8,029-sector (135,657,984-bit)

Description TheHitachiHN29W12811SeriesisaCMOSFlashMemorywithANDtypemulti-levelmemorycells.Ithasfullyautomaticprogramminganderasecapabilitieswithasingle3.3Vpowersupply.Thefunctionsarecontrolledbysimpleexternalcommands.TofittheI/Ocardapplications,the

HitachiHitachi Semiconductor

日立日立公司

HN29W25611

256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

Description TheHitachiHN29W25611SeriesisaCMOSFlashMemorywithANDtypemulti-levelmemorycells.Ithasfullyautomaticprogramminganderasecapabilitieswithasingle3.3Vpowersupply.Thefunctionsarecontrolledbysimpleexternalcommands.TofittheI/Ocardapplications,theunit

HitachiHitachi Semiconductor

日立日立公司

HN29W25611T

256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

Description TheHitachiHN29W25611TisaCMOSFlashMemorywithANDtypemulti-levelmemorycells.Ithasfullyautomaticprogramminganderasecapabilitieswithasingle3.3Vpowersupply.Thefunctionsarecontrolledbysimpleexternalcommands.TofittheI/Ocardapplications,theunitofpr

HitachiHitachi Semiconductor

日立日立公司

HN29W25611T-50

256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

Description TheHitachiHN29W25611SeriesisaCMOSFlashMemorywithANDtypemulti-levelmemorycells.Ithasfullyautomaticprogramminganderasecapabilitieswithasingle3.3Vpowersupply.Thefunctionsarecontrolledbysimpleexternalcommands.TofittheI/Ocardapplications,theunit

HitachiHitachi Semiconductor

日立日立公司

HN29W25611T-50H

256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

Description TheHitachiHN29W25611TisaCMOSFlashMemorywithANDtypemulti-levelmemorycells.Ithasfullyautomaticprogramminganderasecapabilitieswithasingle3.3Vpowersupply.Thefunctionsarecontrolledbysimpleexternalcommands.TofittheI/Ocardapplications,theunitofpr

HitachiHitachi Semiconductor

日立日立公司

HN2C01FE

Audio Frequency General Purpose Amplifier Applications

AudioFrequencyGeneralPurposeAmplifierApplications ●Smallpackage(dualtype) ●Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) ●HighhFE:hFE=120to400 ●ExcellenthFElinearity:hFE(IC=0.1mA)/(IC=2mA)=0.95(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

HN2C01FU

Audio Frequency General Purpose Amplifier Applications

AudioFrequencyGeneralPurposeAmplifierApplications ●Smallpackage(dualtype) ●Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) ●HighhFE:hFE=120~400 ●ExcellenthFElinearity:hFE(IC=0.1mA)/(IC=2mA)=0.95(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

HN2C01FU

NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

AudioFrequencyGeneralPurposeAmplifierApplications ●Smallpackage(dualtype) ●Highvoltageandhighcurrent:VCEO=50V,IC=150mA(max) ●HighhFE:hFE=120~400 ●ExcellenthFElinearity:hFE(IC=0.1mA)/(IC=2mA)=0.95(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

供应商型号品牌批号封装库存备注价格
HITACHI
24+
SOP-24
224
询价
HITACHI
2023+
SOP-24
50000
原装现货
询价
2017+
SMD
1585
只做原装正品假一赔十!
询价
RFM
24+
SMD
5000
RFM专营品牌原装正品假一罚十
询价
MINGTEK
2016+
DIP
8850
只做原装,假一罚十,公司专营变压器,滤波器!
询价
MINGTEK
1736+
DIP
15238
原厂优势渠道
询价
MINGTEK
15+
DIP
45
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
N/A
24+
DIP20
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
MINGTEK
2022+
DIP20
90000
原厂原盒现货,年底清仓大特价!送
询价
23+
DIP-20
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
更多HN供应商 更新时间2025-5-22 16:30:00