Diode Silicon Epitaxial Planar Type

Ultra High Speed Switching Application ● Built in anode common and cathode common. Unit 1 ● Low forward voltage Q1, Q2: VF (3) = 0.90V (typ.) ● Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.) ● Small total capacitance Q1, Q2: CT = 0.9pF (typ.) Unit 2 ● Low forward voltage Q3, Q4: VF (

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DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)

Ultra High Speed Switching Application ● Built in anode common and cathode common. Unit 1 ● Low forward voltage Q1, Q2: VF (3) = 0.90V (typ.) ● Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.) ● Small total capacitance Q1, Q2: CT = 0.9pF (typ.) Unit 2 ● Low forward voltage Q3, Q4: VF (

文件：169.29 Kbytes 页数：4 Pages

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TOSHIBA Diode Silicon Epitaxial Planar Type

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Silicon Epitaxial Planar Type Ultra High Speed Switching Application

文件：267.93 Kbytes 页数：5 Pages

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Silicon Epitaxial Planar Type Ultra High Speed Switching Application

文件：267.93 Kbytes 页数：5 Pages

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Switching diode

Feature：High-speed switching\nInternal Connection：Common cathode + common anode\nNumber of Circuits：4\nAssembly bases：日本\nRoHS Compatible Product(s) (#)：Available Average Forward Current IO 0.1 A \nReverse Voltage VR 80 V ;

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Switching diode

Feature：High-speed switching\nInternal Connection：Common cathode + common anode\nNumber of Circuits：4\nAEC-Q101：Conform(*)\nAssembly bases：日本 / 泰国\nRoHS Compatible Product(s) (#)：Available Average Forward Current IO 0.1 A \nReverse Voltage VR 80 V ;

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Package：SC-74，SOT-457；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY GP 80V 100MA SC74

Toshiba Semiconductor and Storage

Package：6-TSSOP，SC-88，SOT-363；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY GP 80V 80MA US6

Toshiba Semiconductor and Storage