HN1D03F

Diode Silicon Epitaxial Planar Type

UltraHighSpeedSwitchingApplication ●Builtinanodecommonandcathodecommon. Unit1 ●LowforwardvoltageQ1,Q2:VF(3)=0.90V(typ.) ●FastreverserecoverytimeQ1,Q2:trr=1.6ns(typ.) ●SmalltotalcapacitanceQ1,Q2:CT=0.9pF(typ.) Unit2 ●LowforwardvoltageQ3,Q4:VF(

HN1D03FU

DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)

UltraHighSpeedSwitchingApplication ●Builtinanodecommonandcathodecommon. Unit1 ●LowforwardvoltageQ1,Q2:VF(3)=0.90V(typ.) ●FastreverserecoverytimeQ1,Q2:trr=1.6ns(typ.) ●SmalltotalcapacitanceQ1,Q2:CT=0.9pF(typ.) Unit2 ●LowforwardvoltageQ3,Q4:VF(

HN1D03F_14

TOSHIBA Diode Silicon Epitaxial Planar Type

HN1D03FU

Silicon Epitaxial Planar Type Ultra High Speed Switching Application

HN1D03FU_07

Silicon Epitaxial Planar Type Ultra High Speed Switching Application

HN1D03FTE85LF

Package：SC-74，SOT-457；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY GP 80V 100MA SC74

Toshiba Semiconductor and Storage

HN1D03FU,LF

Package：6-TSSOP，SC-88，SOT-363；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY GP 80V 80MA US6

Toshiba Semiconductor and Storage