TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

For Portable Devices High Speed Switching Applications Interface Applications • High input impedance and extremely low drive current. • Vth is low and it is possible to drive directly at low-voltage CMOS. : Vth = 0.5 to 1.0 V • Suitable for high-density mounting because of a compact p

文件：121.71 Kbytes 页数：5 Pages

TOSHIBA

东芝

Silicon N Channel MOS Type For Portable Devices

文件：154.55 Kbytes 页数：5 Pages

TOSHIBA

东芝

Silicon N Channel MOS Type For Portable Devices

文件：154.55 Kbytes 页数：5 Pages

TOSHIBA

东芝

Field Effect Transistor Silicon N Channel MOS Type For Portable Devices High Speed Switching Applications Interface Applications

Toshiba

东芝