Silicon Epitaxial Planar Type Ultra High Speed Switching Application

Ultra High Speed Switching Application ● The HN2D01JE is composed of 2 independent diodes. ● Low forward voltage : VF (3) = 0.98V (typ.) ● Fast reverse recovery time : trr = 1.6ns (typ.) ● Small total capacitance : CT = 0.5pF (typ.)

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TOSHIBA

东芝

Ultra High Speed Switching Application

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TOSHIBA

东芝

Switching diode

Feature：High-speed switching\nInternal Connection：Independent\nNumber of Circuits：2\nAssembly bases：日本\nRoHS Compatible Product(s) (#)：Available Average Forward Current IO 0.1 A \nReverse Voltage VR 80 V ;

Toshiba

东芝

Package：SOT-553；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY GP 80V 100MA ESV

Toshiba Semiconductor and Storage