HN1D01FE

Silicon Epitaxial Planar Type Ultra High Speed Switching Application

UltraHighSpeedSwitchingApplication ●HN1D02FUiscomposedof2unitofcathodecommon. ●Lowforwardvoltage:VF(3)=0.92V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:CT=2.2pF(typ.)

HN1D01FE_14

TOSHIBA Diode Silicon Epitaxial Planar Type

HN1D01FE(TE85L,F)

Package：SOT-563，SOT-666；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY GP 80V 100MA ES6

Toshiba Semiconductor and Storage

HN1D01F

SiliconEpitaxialPlanarTypeUltra-High-SpeedSwitchingApplications

HN1D01F

DIODE(ULTRALHIGHSPEEDSWITCHINGAPPLICATIONS)

Ultra-High-SpeedSwitchingApplications ●Smallpackage ●Lowforwardvoltage:VF(3)=0.92V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:CT=2.2pF(typ.)

HN1D01FU

SiliconEpitaxialPlanarTypeUltraHighSpeedSwitchingApplication

HN1D01FU

DIODE(ULTRAHIGHSPEEDSWITCHINGAPPLICATIONS)

UltraHighSpeedSwitchingApplication ●Smallpackage ●Lowforwardvoltage:VF(3)=0.92V(typ.) ●Fastreverserecoverytime:trr=1.6ns(typ.) ●Smalltotalcapacitance:CT=2.2pF(typ.)

SECT1D01C-S

3.0횞1.5SurfaceMountLEDs(FlatLensType)

SECU1D01C

3x1.5SurfaceMountLED(FlatLens)

VisibleLightLEDs 3.0×1.5SurfaceMountLEDs(FlatLensType)