首页 >H7N0307LSTL-E>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
H7N0307LSTL-E | Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source 文件：105.17 Kbytes 页数：8 Pages | RENESAS 瑞萨 | RENESAS | |
Silicon N Channel MOS FET High Speed Power Switching 文件：83.67 Kbytes 页数：7 Pages | RENESAS 瑞萨 | RENESAS | ||
Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on)= 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source 文件：120.13 Kbytes 页数：12 Pages | RENESAS 瑞萨 | RENESAS | ||
Silicon N Channel MOS FET High Speed Power Switching 文件：83.67 Kbytes 页数：7 Pages | RENESAS 瑞萨 | RENESAS |
详细参数
- 型号：
H7N0307LSTL-E
- 制造商：
RENESAS
- 制造商全称：
Renesas Technology Corp
- 功能描述：
Silicon N Channel MOS FET High Speed Power Switching
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
2450+ |
TO263-3 |
6540 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
RENESAS/瑞萨 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
RENESAS |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
R |
TO-220AB |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
NEC |
26+ |
WQFN10 |
86720 |
全新原装正品价格最实惠 假一赔百 |
询价 | ||
RENESAS |
21+ |
TO-220 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
RENESAS |
TO-220 |
68552 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
RENESAS |
23+ |
TO-220 |
48283 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
RENESAS |
2023+ |
TO-220 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
询价 | ||
RENESAS |
24+ |
TO-220 |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 |
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