丝印：GT130N10；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT130N10D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：719.88 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT130N10；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT130N10D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.0272 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT130N10；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The GT130N10F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：687.12 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT130N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The GT130N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：686.84 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT130N10；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT130N10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：969.76 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT130N10；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT130N10MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.23216 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT130N10；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT130N10D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：719.88 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT130N10；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT130N10D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.0272 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT130N10；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The GT130N10F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：687.12 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT130N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The GT130N10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：686.84 Kbytes 页数：6 Pages

GOFORD

谷峰半导体