丝印：GT110N06；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT110N06D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：758.1 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT110N06；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT110N06D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.03231 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT110N06；Package：DFN5/6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT110N06D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：956.24 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT110N06；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT110N06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：983.22 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT110N06；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description The GT110N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.06818 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT110N06H；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description The GT110N06SH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：943.74 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT110N06；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT110N06D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：758.1 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT110N06；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT110N06D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.03231 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT110N06；Package：DFN5/6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GT110N06D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：956.24 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GT110N06；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GT110N06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：983.22 Kbytes 页数：6 Pages

GOFORD

谷峰半导体