丝印：GP10NB37LZ；Package：TO-220；10 A - 410 V internally clamped IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection. Feat

文件：751.46 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：GP10NC60HD；Package：TO-220；600 V - 10 A - very fast IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recov

文件：771.12 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

丝印：GP10NC60KD；Package：TO-220；10 A, 600 V short-circuit rugged IGBT

Description These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features  Lowe

文件：1.6576 Mbytes 页数：30 Pages

STMICROELECTRONICS

意法半导体

丝印：GP100N30；Package：TO-220；90 A - 330 V - fast IGBT

文件：699.37 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：GP10NC60S；Package：TO-220；10 A, 600 V fast IGBT

文件：1.27233 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

General Purpose

Frontier

General Purpose

Frontier

General Purpose

Frontier

包装：散装 描述：GAP PAD THERM CON SI-FREE

BERGQUIST

包装：散装 描述：GAP PAD THERM CON SI-FREE

BERGQUIST