G6B

型号：AP3012KTR-G1；Package：SOT-23-5；1.5MHz STEP-UP DC-DC CONVERTER

Features ·HighEfficiencyupto81 ·AdjustableOutputVoltageupto29V ·ShutdownCurrent1μATypical ·1.5MHzSwitchingFrequency ·36V500mARuggedIntegratedBipolarSwitch ·Built-inSoft-starttoReduceInrushCurrentDuringStart-up ·On-chipOvervoltageProtection ·UsesLowESR

G6F

型号：AP3015AKTR-G1；Package：SOT-23-5；MICRO POWER STEP-UP DC-DC CONVERTER

Features ·LowQuiescentCurrent InActiveMode(NotSwitching):17μATypical InShutdownMode:

G6E

型号：AP3015KTR-G1；Package：SOT-23-5；MICRO POWER STEP-UP DC-DC CONVERTER

Features ·LowQuiescentCurrent InActiveMode(NotSwitching):17μATypical InShutdownMode:

G6T

型号：AS321KTR-G1；Package：SOT25；LOW POWER SINGLE OPERATIONAL AMPLIFIER

Features ExcellentPhaseMargin:60deg. LargeVoltageGain:100dB(Typical) LowInputBiasCurrent:20nA(Typical) LowInputOffsetVoltage:2mV(Typical) LowSupplyCurrent:0.35mAatVCC=5V WidePowerSupplyVoltage: SingleSupply:3Vto36V DualSupplies:±1.5Vto±18

G6D

型号：AZV321KTR-G1；Package：SOT-23-5；SINGLE LOW VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIER

Features Guaranteed2.7Vto5.5VPerformance NoCrossoverDistortion Gain-BandwidthProduct1MHz IndustrialTemperatureRange:-40ºCto+85ºC LowSupplyCurrent:130μA Rail-to-RailOutputSwingunder10kΩLoad: VOHuptoVCC-10mV VOLneartoVEE+65mV VCM:-0.1VtoVCC-0.8V

G6s

型号：BAR63-06；Package：SOT-23；Silicon PIN Diodes

●PINdiodeforhighspeedswitchingofRFsignals ●Verylowforwardresistance(lowinsertionloss) ●Verylowcapacitance(highisolation) ●Forfrequenciesupto3GHz

G6s

型号：BAR63-06W；Package：SOT-323；Silicon PIN Diodes

●PINdiodeforhighspeedswitchingofRFsignals ●Verylowforwardresistance(lowinsertionloss) ●Verylowcapacitance(highisolation) ●Forfrequenciesupto3GHz

G60KN30

型号：G60KN30I；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description TheG60KN30Iusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G60KN30

型号：G60KN30IA；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description TheG60KN30IAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

G60N04

型号：G60N04D5；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description TheG60N04D5usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters