BAW56QB

Marking：G7；Package：SOT8015；Dual common anode high-speed switching diode

1.Generaldescription Dualcommonanodehigh-speedswitchingdiodeencapsulatedinaleadlessultrasmall DFN1110D-3(SOT8015)Surface-MountedDevice(SMD)plasticpackagewithvisibleand solderablesidepads. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowleakagecurr

BAW56QB-Q

Marking：G7；Package：SOT8015；Dual common anode high-speed switching diode

1.Generaldescription Dualcommonanodehigh-speedswitchingdiodeencapsulatedinaleadlessultrasmall DFN1110D-3(SOT8015)Surface-MountedDevice(SMD)plasticpackagewithvisibleand solderablesidepads. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowleakagecurr

BZD27C120P

Marking：G7；Voltage Regulator Diodes

Features ◇Silliconplanarzenerdiodes. ◇Lowprofilesurface-mountpackage. ◇Zenerandsurgecurrentspecification ◇Lowleakagecurrent ◇Excellentstability ◇Hightemperaturesolderingguaranteed:265℃/10seconds,atterminals

BZD27C120P

Marking：G7；Package：SOD-123FL；Voltage Regulator Diodes

Features ◇Silliconplanarzenerdiodes. ◇Lowprofilesurface-mountpackage. ◇Zenerandsurgecurrentspecification ◇Lowleakagecurrent ◇Excellentstability ◇Hightemperaturesolderingguaranteed:265℃/10seconds,atterminals

BZT52H-A8V2

Marking：G7；Package：SOD123F；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD123FsmallandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤830mW •Threetoleranceseries:±1%,±2%andapproximately±5% •Wideworkingvoltagera

BZT52H-A8V2-Q

Marking：G7；Package：SOD123F；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD123FsmallandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤830mW •Threetoleranceseries:±1%,±2%andapproximately±5% •Wideworkingvoltagera

NC7SV34L6X

Marking：G7；Package：MicroPak；TinyLogic ULP-A Buffer

TheNC7SV34isasingleBufferintinyfootprintpackages.The deviceisdesignedtooperateforVCC=0.9Vto3.6V. Features •Designedfor0.9Vto3.6VVCCOperation •1.4nstPDat3.3V(Typ) •Inputs/OutputsOver−VoltageTolerantupto3.6V •IOFFSupportsPartialPowerDownProt

PBRN123YK

Marking：G7；Package：SC-59A；NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kW, R2 = 10 kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

PESD5V0U5BV

Marking：G7；Package：SOT666；Ultra low capacitance bidirectional fivefold ESD protection array

1.Generaldescription UltralowcapacitancebidirectionalfivefoldElectroStaticDischarge(ESD)protectionarrayinan ultrasmallandflatleadSOT666Surface-MountedDevice(SMD)plasticpackage,designedto protectuptofivesignallinesfromthedamagecausedbyESDandothertransients.

PMEG6010CEGW-Q

Marking：G7；Package：SOD123；60 V, 1 A Low VF Schottky barrier rectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotectionencapsulatedin smallSOD123Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Forwardcurrent:IF≤1A •ReversevoltageVR≤60V •Lowforwardvoltage,ty