BU33TD3WG-XTR

Marking：G7；Package：SSOP5；Versatile Package FULL CMOS LDO Regulator

CRG07

Marking：G7；Package：3-2A1A；TOSHIBA Rectifier Silicon Diffused Type

FP6121-TS6G

Marking：G7；Package：SOT-23-6；300mA, High PSRR, Dual Output Low-Dropout Regulator

PMEG6010CEGW

Marking：G7；Package：SOD123；60 V, 1 A Low VF MEGA Schottky barrier rectifier

PMN16XNE

Marking：G7；Package：TSOP6；20 V, N-channel Trench MOSFET

PZU3.6B

Marking：G7；Package：SOD-323F；Single Zener diodes in a SOD323F package

TLV70225QDSERQ1

Marking：G7；Package：WSON；300-mA, Low-IQ, Low-Dropout Regulator

AP3602AKTR-G1

Marking：G7T；Package：SOT26；100mA REGULATED CHARGE PUMP

Features •Low-QuiescentCurrent:13μATypical •RegulatedOutputVoltagePrecision:4 •High-OutputCurrent: 100mAwhenVIN≥3.0V 50mAwhenVIN≥2.7V •HighFrequencyupto1.2MHz •LowShutdownSupplyCurrent:

DMG7410SFGQ-13

Marking：G74；Package：POWERDI3333-8；N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI

Features LowRDS(ON)–EnsuresonStateLossesAreMinimized SmallFormFactorThermallyEfficientPackageEnablesHigher DensityEndProducts OccupiesJust33oftheBoardAreaOccupiedbySO-8Enabling SmallerEndProduct 100UIS(Avalanche)Rated 100RgTested Lead-FreeFini

DMG7410SFGQ-7

Marking：G74；Package：POWERDI3333-8；N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI

Features LowRDS(ON)–EnsuresonStateLossesAreMinimized SmallFormFactorThermallyEfficientPackageEnablesHigher DensityEndProducts OccupiesJust33oftheBoardAreaOccupiedbySO-8Enabling SmallerEndProduct 100UIS(Avalanche)Rated 100RgTested Lead-FreeFini