丝印：G75；Package：VSSOP；LM4875 750 mW Audio Power Amplifier with DC Volume Control and Headphone Switch

1FEATURES 2• Precision DC Voltage Volume Control • Headphone Amplifier Mode • “Click and Pop” Suppression • Shutdown Control When Volume Control Pin Is Low • Thermal Shutdown Protection APPLICATIONS • GSM Phones and Accessories, DECT, Office Phones • Hand Held Radio • Other Portable A

文件：1.21729 Mbytes 页数：27 Pages

TI

德州仪器

丝印：G75；Package：VSSOP；LM4875 750 mW Audio Power Amplifier with DC Volume Control and Headphone Switch

1FEATURES 2• Precision DC Voltage Volume Control • Headphone Amplifier Mode • “Click and Pop” Suppression • Shutdown Control When Volume Control Pin Is Low • Thermal Shutdown Protection APPLICATIONS • GSM Phones and Accessories, DECT, Office Phones • Hand Held Radio • Other Portable A

文件：1.21729 Mbytes 页数：27 Pages

TI

德州仪器

丝印：G75；Package：DO-214AC；Zener Diodes

文件：1.54174 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：G75T65MQDC50；Package：TO-247-4LD；IGBT - Power, Co-PAK N-Channel, Field Stop IV, MQ (Medium Speed), TO247-4L 650 V, 1.45 V, 75 A

Using the novel field stop 4th generation IGBT technology and generation 1.5 SiC Schottky Diode technology in TO−247 4−lead package, FGH4L75T65MQDC50 offers the optimum performance with both low conduction and switching losses for high−efficiency operations in various applications, especially

文件：313.4 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：G75P04；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The G75P04D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：896.68 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G75P04；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The G75P04D5A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.01986 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G75P04；Package：TO-220F；P-Channel Enhancement Mode Power MOSFET

Description The G75P04F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：681.49 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G75P04I；Package：TO-220F；P-Channel Enhancement Mode Power MOSFET

Description The G75P04FI uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：667.89 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G75P04；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G75P04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：625.28 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G75P04；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G75P04KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：900.7 Kbytes 页数：6 Pages

GOFORD

谷峰半导体