丝印：G75T65MQDC50；Package：TO-247-4LD；IGBT - Power, Co-PAK N-Channel, Field Stop IV, MQ (Medium Speed), TO247-4L 650 V, 1.45 V, 75 A

Using the novel field stop 4th generation IGBT technology and generation 1.5 SiC Schottky Diode technology in TO−247 4−lead package, FGH4L75T65MQDC50 offers the optimum performance with both low conduction and switching losses for high−efficiency operations in various applications, especially

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