丝印：G80P03；Package：DFN5/6；P-Channel Enhancement Mode Power MOSFET

General Description The G80P03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：903.16 Kbytes 页数：5 Pages

GOFORD

谷峰半导体

丝印：G80P03；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G80P03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：621.66 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G80P03；Package：DFN5/6；P-Channel Enhancement Mode Power MOSFET

General Description The G80P03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：903.16 Kbytes 页数：5 Pages

GOFORD

谷峰半导体

丝印：G80P03；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G80P03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：621.66 Kbytes 页数：6 Pages

GOFORD

谷峰半导体