丝印：G90P04；Package：TO-220F；P-Channel Enhancement Mode Power MOSFET

Description The G90P04F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：704.87 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G90P04；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G90P04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：638.79 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G90P04；Package：TO-220F；P-Channel Enhancement Mode Power MOSFET

Description The G90P04F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：704.87 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G90P04；Package：TO-252；P-Channel Enhancement Mode Power MOSFET

Description The G90P04K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：638.79 Kbytes 页数：6 Pages

GOFORD

谷峰半导体