丝印：G9；Package：MSOP；Precision, Micropower, High Current Output Voltage References

GENERAL DESCRIPTION The ADR3625ADR3630ADR3650 are low power, high precision voltage references that feature a maximum temperature coefficient of 3 ppm/°C for the B grade in an 8-lead MSOP. Capable of sourcing up to 70 mA, the ADR3625ADR3630ADR3650 are an exceptional replacement to standard lo

文件：3.98401 Mbytes 页数：26 Pages

AD

亚德诺

丝印：G9；Package：MSOP；Precision, Micropower, High Current Output Voltage References

GENERAL DESCRIPTION The ADR3625ADR3630ADR3650 are low power, high precision voltage references that feature a maximum temperature coefficient of 3 ppm/°C for the B grade in an 8-lead MSOP. Capable of sourcing up to 70 mA, the ADR3625ADR3630ADR3650 are an exceptional replacement to standard lo

文件：3.98401 Mbytes 页数：26 Pages

AD

亚德诺

丝印：G9；Voltage Regulator Diodes

Features ◇ Sillicon planar zener diodes. ◇ Low profile surface-mount package. ◇ Zener and surge current specification ◇ Low leakage current ◇ Excellent stability ◇ High temperature soldering guaranteed: 265℃/10 seconds, at terminals

文件：2.05751 Mbytes 页数：4 Pages

LUGUANG

鲁光电子

丝印：G9；Package：SOD-123FL；Voltage Regulator Diodes

Features ◇ Sillicon planar zener diodes. ◇ Low profile surface-mount package. ◇ Zener and surge current specification ◇ Low leakage current ◇ Excellent stability ◇ High temperature soldering guaranteed: 265℃/10 seconds, at terminals

文件：742.14 Kbytes 页数：4 Pages

LUGUANG

鲁光电子

丝印：G9；Package：SOD123F；Voltage regulator diodes

1. General description General-purpose Zener diodes in an SOD123F small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 830 mW • Three tolerance series: ±1 , ±2 and approximately ±5 • Wide working voltage range: nominal 2.

文件：333.71 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：G9；Package：SOD123F；Voltage regulator diodes

1. General description General-purpose Zener diodes in an SOD123F small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 830 mW • Three tolerance series: ±1 , ±2 and approximately ±5 • Wide working voltage range: nominal 2.

文件：314.74 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：G9；Package：SOT-553；NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kW. 2) Two DTC114E chips in one package. 3) Emitter(GND)-common type. 4) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 5) The bias resistors

文件：463.57 Kbytes 页数：8 Pages

ROHM

罗姆

丝印：G9；Package：SOT-553；Emitter common (dual digital transistors)

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kW. 2) Two DTC114E chips in one package. 3) Emitter(GND)-common type. 4) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 5) The bias resistors

文件：76.33 Kbytes 页数：2 Pages

ROHM

罗姆

丝印：G9；Package：SOT-753；NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kW. 2) Two DTC114E chips in one package. 3) Emitter(GND)-common type. 4) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 5) The bias resistors

文件：463.57 Kbytes 页数：8 Pages

ROHM

罗姆

丝印：G9；Package：SOT-753；Emitter common (dual digital transistors)

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kW. 2) Two DTC114E chips in one package. 3) Emitter(GND)-common type. 4) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 5) The bias resistors

文件：76.33 Kbytes 页数：2 Pages

ROHM

罗姆