MM5Z56

Marking：G9；Package：SOD-558；Zener Diode

Features ●Highreliability ●ZenerVoltage2.0V~75V

MMBZ33VB-QB

Marking：G9；Package：DFN1110D-3；Low capacitance bidirectional dual line ESD protection diode

1.Generaldescription ESDprotectiondeviceinanultrasmallDFN1110D-3(SOT8015)leadlessSurface-MountedDevice (SMD)plasticpackagewithsidewettableflanks,designedtoprotecttwolinesfromthedamage causedbyElectroStaticdischarge(ESD)andothertransients. 2.Featuresandben

PTVS130VP1BPL

Marking：G9；Package：CFP5-FL；600 W Transient Voltage Suppressor

1.Generaldescription 600Wbi-directionalTransientVoltageSuppressor(TVS)inaCFP5-FL(SOD128FL)smallandflat leadSurface-MountedDevice(SMD)plasticpackage,designedfortransientvoltageprotection. 2.Featuresandbenefits •Ratedpeakpulsepowerat10/1000μswaveform:PPPM=

PZU4.3

Marking：G9；Package：SC-90；Zener diodes in a SOD323F package

1.Generaldescription General-purposeZenerdiodesinaSOD323F(SC-90)verysmallandflatleadSurfaceMounted Device(SMD)plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:550mW •Toleranceseries:B:approximately5;B1,B2,B3:sequential,approximately2 •Sma

UMG9N

Marking：G9；Package：SOT-353；NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

Features 1)Built-InBiasingResistors,R1=R2=10kW. 2)TwoDTC114Echipsinonepackage. 3)Emitter(GND)-commontype. 4)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 5)Thebiasresistors

UMG9N

Marking：G9；Package：SOT-353；Emitter common (dual digital transistors)

Features 1)Built-InBiasingResistors,R1=R2=10kW. 2)TwoDTC114Echipsinonepackage. 3)Emitter(GND)-commontype. 4)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnercircuit). 5)Thebiasresistors

UPG2406T6R-E2

Marking：G9；Package：TSSON；GaAs INTEGRATED CIRCUIT

FEATURES •Switchcontrolvoltage:Vcont(H)=1.8to3.3V(2.7VTYP.) :Vcont(L)=−0.2to+0.2V(0VTYP.) •Lowinsertionloss:Lins=0.40dBTYP.@f=1.0GHz,Vcont(H)=2.7V,Vcont(L)=0V :Lins=0.47dBTYP.@f=2.5GHz,Vcont(H)=2.7V,Vcont(L)=0V •Highisolati

UPG2406T6R-E2-A

Marking：G9；Package：TSSON；GaAs INTEGRATED CIRCUIT

FEATURES •Switchcontrolvoltage:Vcont(H)=1.8to3.3V(2.7VTYP.) :Vcont(L)=−0.2to+0.2V(0VTYP.) •Lowinsertionloss:Lins=0.40dBTYP.@f=1.0GHz,Vcont(H)=2.7V,Vcont(L)=0V :Lins=0.47dBTYP.@f=2.5GHz,Vcont(H)=2.7V,Vcont(L)=0V •Highisolati

BAT54GW

Marking：G9；Package：SOD123；30 V, 200 mA Schottky barrier diodes

EMG9

Marking：G9；Package：SOT-553；Emitter common (dual digital transistors)