丝印：G75T65MQDC50；Package：TO-247-4LD；IGBT - Power, Co-PAK N-Channel, Field Stop IV, MQ (Medium Speed), TO247-4L 650 V, 1.45 V, 75 A

Using the novel field stop 4th generation IGBT technology and generation 1.5 SiC Schottky Diode technology in TO−247 4−lead package, FGH4L75T65MQDC50 offers the optimum performance with both low conduction and switching losses for high−efficiency operations in various applications, especially

文件：313.4 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

650V Field stop 4th generation mid speed IGBT with co-pack SiC diode

Using the novel field stop 4th generation IGBT and 1.5 generation SiC Schottky Diode technology in TO-247 4-lead package, FGH4L75T65MQDC50 offers the optimum performance with low conduction and switching losses for high-efficiency operations for industrial applications • Positive temperature co-efficient\n• Low Vce(sat)\n• Low Eon and Eoff;

ONSEMI

安森美半导体

ON
TO247-3

ON

上传：深圳市欧特拉科技有限公司

ON
TO247-3

ON

上传：深圳市欧特拉科技有限公司

FSC
TO-247

FSC

上传：深圳市宏浩通电子科技有限公司