丝印：G7K2N20；Package：SOT-223；N-Channel Enhancement Mode Power MOSFET

Description The G7K2N20HE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：912.41 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G7K2N20；Package：SOT-23-6；N-Channel Enhancement Mode Power MOSFET

Description The G7K2N20LLE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：877.34 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G7K2N20；Package：SOT-223；N-Channel Enhancement Mode Power MOSFET

Description The G7K2N20HE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：912.41 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G7K2N20；Package：SOT-23-6；N-Channel Enhancement Mode Power MOSFET

Description The G7K2N20LLE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：877.34 Kbytes 页数：6 Pages

GOFORD

谷峰半导体