丝印：G7P03；Package：DFN2/2-6L；P-Channel Enhancement Mode Power MOSFET

Description The G7P03D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application ⚫ Synchronous Rectification in SMPS or LED Driver ⚫ UPS ⚫ Motor Control ⚫ BMS ⚫ High Frequency Circuit

文件：664.25 Kbytes 页数：6 Pages

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谷峰半导体

丝印：G7P03；Package：DFN2/2-6L；P-Channel Enhancement Mode Power MOSFET

Description The G7P03D2A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application ⚫ Synchronous Rectification in SMPS or LED Driver ⚫ UPS ⚫ Motor Control ⚫ BMS ⚫ High Frequency Circuit

文件：729.38 Kbytes 页数：6 Pages

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谷峰半导体

丝印：G7P03；Package：SOT-23-3；P-Channel Enhancement Mode Power MOSFET

Description The G7P03L uses advanced trench technology to provide excellent R DS(ON) , low gate charge. It can be used in a wide variety of applications. Application Power switch DC/DC converters

文件：839.74 Kbytes 页数：6 Pages

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谷峰半导体

丝印：G7P03；Package：SOP-8；P-Channel Trench MOSFET

Description The G7P03S uses advanced trench technology to provide excellent R DS(ON) , low gate charge. It can be used in a wide variety of applications. Application Power switch DC/DC converters

文件：1.28862 Mbytes 页数：6 Pages

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谷峰半导体

丝印：G7P03；Package：DFN2/2-6L；P-Channel Enhancement Mode Power MOSFET

Description The G7P03D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application ⚫ Synchronous Rectification in SMPS or LED Driver ⚫ UPS ⚫ Motor Control ⚫ BMS ⚫ High Frequency Circuit

文件：664.25 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G7P03；Package：DFN2/2-6L；P-Channel Enhancement Mode Power MOSFET

Description The G7P03D2A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application ⚫ Synchronous Rectification in SMPS or LED Driver ⚫ UPS ⚫ Motor Control ⚫ BMS ⚫ High Frequency Circuit

文件：729.38 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G7P03；Package：SOT-23-3；P-Channel Enhancement Mode Power MOSFET

Description The G7P03L uses advanced trench technology to provide excellent R DS(ON) , low gate charge. It can be used in a wide variety of applications. Application Power switch DC/DC converters

文件：839.74 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G7P03；Package：SOP-8；P-Channel Trench MOSFET

Description The G7P03S uses advanced trench technology to provide excellent R DS(ON) , low gate charge. It can be used in a wide variety of applications. Application Power switch DC/DC converters

文件：1.28862 Mbytes 页数：6 Pages

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谷峰半导体

P-Channel Enhancement Mode Power MOSFET

Description The G7P03LA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application Power switch DC/DC converters

文件：945.45 Kbytes 页数：6 Pages

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谷峰半导体