丝印：G7P03；Package：SOT-23-3；P-Channel Enhancement Mode Power MOSFET

Description The G7P03L uses advanced trench technology to provide excellent R DS(ON) , low gate charge. It can be used in a wide variety of applications. Application Power switch DC/DC converters

文件：839.74 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

P-Channel Enhancement Mode Power MOSFET

Description The G7P03LA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application Power switch DC/DC converters

文件：945.45 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

-30V P Channel TRENCH MOSFET

GOFORD

谷峰半导体

P-Channel Trench MOSFET

Description The G7P03S uses advanced trench technology to provide excellent R DS(ON) , low gate charge. It can be used in a wide variety of applications. Application Power switch DC/DC converters

文件：1.28862 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

Power MOSFET 7 A, 30 V, P?묬hannel SO??

These miniature surface mount devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordl

文件：94.69 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

SINGLE TMOS POWER MOSFET 30 VOLTS

Single HDTMOS are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process. HDTMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management

文件：214.71 Kbytes 页数：10 Pages

Motorola

摩托罗拉