G75P04S

Marking：G75P04；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

Description TheG75P04Susesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G75P04T

Marking：G75P04；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description TheG75P04Tusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

IGQ75N120S7

Marking：G75MS7；Package：PG-TO247-3-PLUS-NN3.7；Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology

Features •VCE=1200V •IC=75A •LowsaturationvoltageVCEsat=2.0VatTvj=175°C •Shortcircuitruggedness8μs •Widerangeofdv/dtcontrollability •CompleteproductspectrumandPSpiceModels:http://www.infineon.com/igbt/

IGW75N60H3

Marking：G75H603；Package：PG-TO247-3；High speed switching series third generation

Features: TRENCHSTOP™technologyoffering •verylowVCEsat •lowEMI •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating,halogen-freemouldcompound,RoHS compliant •completeproductspectrumandPSpiceModels: http://www.i

STGWA75H65DFB2

Marking：G75H65DFB2；Package：TO-247；Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package

Features •Maximumjunctiontemperature:TJ=175°C •LowVCE(sat)=1.55V(typ.)@IC=75A •Veryfastandsoftrecoveryco-packageddiode •Minimizedtailcurrent •Tightparameterdistribution •Lowthermalresistance •PositiveVCE(sat)temperaturecoefficient Applications •Weld