丝印：G75P04；Package：TO-220F；P-Channel Enhancement Mode Power MOSFET

Description The G75P04F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：681.49 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G75P04I；Package：TO-220F；P-Channel Enhancement Mode Power MOSFET

Description The G75P04FI uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：667.89 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

Trench Mosfet

GOFORD

谷峰半导体

MOS FIELD EFFECT TRANSISTOR

Description The NP75P04YLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 9.7 mΩ MAX. (VGS = −10 V, ID = −37.5 A) ⎯ RDS(on) = 14 mΩ MAX. (VGS = −5 V, ID = −37.5 A) • Logic level drive type • Gat

文件：243.96 Kbytes 页数：8 Pages

RENESAS

瑞萨

Product Scout Automotive

文件：5.67799 Mbytes 页数：6 Pages

RENESAS

瑞萨

40V P-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@-10V, ID@-20A

文件：436.76 Kbytes 页数：6 Pages

PANJIT

強茂