G7P03D2

Marking：G7P03；Package：DFN2/2-6L；P-Channel Enhancement Mode Power MOSFET

Description TheG7P03D2usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawidevarietyofapplications. Application ⚫SynchronousRectificationinSMPSorLEDDriver ⚫UPS ⚫MotorControl ⚫BMS ⚫HighFrequencyCircuit

G7P03D2A

Marking：G7P03；Package：DFN2/2-6L；P-Channel Enhancement Mode Power MOSFET

Description TheG7P03D2AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application ⚫SynchronousRectificationinSMPSorLEDDriver ⚫UPS ⚫MotorControl ⚫BMS ⚫HighFrequencyCircuit

G7P03L

Marking：G7P03；Package：SOT-23-3；P-Channel Enhancement Mode Power MOSFET

Description TheG7P03Lusesadvancedtrenchtechnologytoprovide excellentR DS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application Powerswitch DC/DCconverters

G7P03S

Marking：G7P03；Package：SOP-8；P-Channel Trench MOSFET

Description TheG7P03Susesadvancedtrenchtechnologytoprovide excellentR DS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application Powerswitch DC/DCconverters

IGQ75N120S7

Marking：G75MS7；Package：PG-TO247-3-PLUS-NN3.7；Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology

Features •VCE=1200V •IC=75A •LowsaturationvoltageVCEsat=2.0VatTvj=175°C •Shortcircuitruggedness8μs •Widerangeofdv/dtcontrollability •CompleteproductspectrumandPSpiceModels:http://www.infineon.com/igbt/

IGW75N60H3

Marking：G75H603；Package：PG-TO247-3；High speed switching series third generation

Features: TRENCHSTOP™technologyoffering •verylowVCEsat •lowEMI •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating,halogen-freemouldcompound,RoHS compliant •completeproductspectrumandPSpiceModels: http://www.i

RT9011-PSGQW

Marking：G7*；Package：WDFN-82x2；Portable Power Management 300mA Dual LDO Regulator

GeneralDescription TheRT9011isadualchannel,lownoise,andlowdropoutregulatorsourcingupto300mAateachchannel.Therangeofoutputvoltageisfrom1.2Vto3.6Vbyoperatingfrom2.5Vto5.5Vinput. Features •WideOperatingVoltageRanges:2.5Vto5.5V •Low-NoiseforRFApplica

STGWA75H65DFB2

Marking：G75H65DFB2；Package：TO-247；Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package

Features •Maximumjunctiontemperature:TJ=175°C •LowVCE(sat)=1.55V(typ.)@IC=75A •Veryfastandsoftrecoveryco-packageddiode •Minimizedtailcurrent •Tightparameterdistribution •Lowthermalresistance •PositiveVCE(sat)temperaturecoefficient Applications •Weld

AZ1117CR2-2.5TRG1

Marking：G70M；Package：SOT89；LOW DROPOUT LINEAR REGULATOR

AZ1117CR2-3.3TRG1

Marking：G70N；Package：SOT89；LOW DROPOUT LINEAR REGULATOR