丝印：G700P06；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G700P06D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：653.1 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G700P06；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G700P06D3A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：924.77 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G700P06；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description The G700P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：950.71 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G700P06；Package：SOT-223；P-Channel Enhancement Mode Power MOSFET

Description The G700P06H uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：816.42 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G700P06；Package：SOT-223；P-Channel Enhancement Mode Power MOSFET

Description The G700P06HA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.07079 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G700P06；Package：TO-251；P-Channel Enhancement Mode Power MOSFET

Description The G700P06J uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：855.41 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G700P06；Package：SOT-23-6；P-Channel Enhancement Mode Power MOSFET

Description The G700P06LL uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：875.32 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G700P06；Package：SOT-23-6；P-Channel Enhancement Mode Power MOSFET

Description The G700P06LLA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：839.47 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G700P06；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G700P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：964.59 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G700P06；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description The G700P06D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：653.1 Kbytes 页数：6 Pages

GOFORD

谷峰半导体