DMG7430LFGQ-13

Marking：G73；Package：PowerDI3333-8；N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8

Features •LowRDS(on)–EnsuresOnStateLossesAreMinimized •100UnclampedInductiveSwitching,TestinProduction–EnsuresMoreReliableAndRobustEndApplication •SmallFormFactorThermallyEfficientPackageEnablesHigherDensityEndProducts •OccupiesJust33ofTheBoardAreaOcc

DMG7430LFGQ-7

Marking：G73；Package：PowerDI3333-8；N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8

Features •LowRDS(on)–EnsuresOnStateLossesAreMinimized •100UnclampedInductiveSwitching,TestinProduction–EnsuresMoreReliableAndRobustEndApplication •SmallFormFactorThermallyEfficientPackageEnablesHigherDensityEndProducts •OccupiesJust33ofTheBoardAreaOcc

FGH4L75T65MQDC50

Marking：G75T65MQDC50；Package：TO-247-4LD；IGBT - Power, Co-PAK N-Channel, Field Stop IV, MQ (Medium Speed), TO247-4L 650 V, 1.45 V, 75 A

Usingthenovelfieldstop4thgenerationIGBTtechnologyand generation1.5SiCSchottkyDiodetechnologyinTO−2474−lead package,FGH4L75T65MQDC50offerstheoptimumperformance withbothlowconductionandswitchinglossesforhigh−efficiency operationsinvariousapplications,especially

G700P06D3

Marking：G700P06；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description TheG700P06D3usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G700P06D3A

Marking：G700P06；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description TheG700P06D3Ausesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

G700P06D5

Marking：G700P06；Package：DFN5X6-8L；P-Channel Enhancement Mode Power MOSFET

Description TheG700P06D5usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

G700P06H

Marking：G700P06；Package：SOT-223；P-Channel Enhancement Mode Power MOSFET

Description TheG700P06Husesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G700P06HA

Marking：G700P06；Package：SOT-223；P-Channel Enhancement Mode Power MOSFET

Description TheG700P06HAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

G700P06J

Marking：G700P06；Package：TO-251；P-Channel Enhancement Mode Power MOSFET

Description TheG700P06Jusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

G700P06LL

Marking：G700P06；Package：SOT-23-6；P-Channel Enhancement Mode Power MOSFET

Description TheG700P06LLusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters