零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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Marking:G60H65DFB;Package:TO247-4;Trench gate field-stop 650 V, 60 A high speed HB series IGBT Features •Maximumjunctiontemperature:TJ=175°C •Excellentswitchingperformancethankstotheextradrivingkelvinpin •LowVCE(sat)=1.6V(typ.)@IC=60A •Minimizedtailcurrent •Tightparameterdistribution •Safeparalleling •Lowthermalresistance •Veryfastsoftrecov | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Marking:G60H65DFB;Package:TO-247;Trench gate field-stop 650 V, 60 A high speed HB series IGBT Description ThesedevicesareIGBTsdevelopedusinganadvancedproprietarytrenchgatefieldstop structure.ThesedevicesarepartofthenewHBseriesofIGBTs,which representanoptimumcompromisebetweenconductionandswitchinglossto maximizetheefficiencyofanyfrequencyconverter. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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