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STGW60H65DFB-4

Marking:G60H65DFB;Package:TO247-4;Trench gate field-stop 650 V, 60 A high speed HB series IGBT

Features •Maximumjunctiontemperature:TJ=175°C •Excellentswitchingperformancethankstotheextradrivingkelvinpin •LowVCE(sat)=1.6V(typ.)@IC=60A •Minimizedtailcurrent •Tightparameterdistribution •Safeparalleling •Lowthermalresistance •Veryfastsoftrecov

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STGWA60H65DFB

Marking:G60H65DFB;Package:TO-247;Trench gate field-stop 650 V, 60 A high speed HB series IGBT

Description ThesedevicesareIGBTsdevelopedusinganadvancedproprietarytrenchgatefieldstop structure.ThesedevicesarepartofthenewHBseriesofIGBTs,which representanoptimumcompromisebetweenconductionandswitchinglossto maximizetheefficiencyofanyfrequencyconverter.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

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