型号下载 订购功能描述制造商 上传企业LOGO

G60N06T

丝印:G60N06;Package:TO-220;N-Channel Enhancement Mode Power MOSFET

Description The G60N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件:974.03 Kbytes 页数:6 Pages

GOFORD

谷峰半导体

G60N06T

丝印:G60N06;Package:TO-220;N-Channel Enhancement Mode Power MOSFET

Description The G60N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件:974.03 Kbytes 页数:6 Pages

GOFORD

谷峰半导体

供应商型号品牌批号封装库存备注价格
24+
N/A
58000
一级代理-主营优势-实惠价格-不悔选择
询价
IR
22+
NA
6000
终端可免费供样,支持BOM配单
询价
IR
23+
NA
8000
只做原装现货
询价
IR
23+
NA
7000
询价
G
24+
TO
500
询价
原厂
23+
TO-3PL
5000
原装正品,假一罚十
询价
CHN
23+
TO-3PL
50000
全新原装正品现货,支持订货
询价
Freescale(飞思卡尔)
2022+
60000
原厂原装,假一罚十
询价
CHN
24+
NA/
300
优势代理渠道,原装正品,可全系列订货开增值税票
询价
FSC
2025+
TO-3P
4325
全新原厂原装产品、公司现货销售
询价
更多G60N06供应商 更新时间2025-9-16 11:06:00